This document describes the characteristics and specifications of the RD70HUF2 single-stage amplifier, including frequency, input power, output power, quiescent current, and operating current.
The document introduces the RD70HUF2 evaluation board, a single‑stage silicon RF power amplifier covering 135‑175 MHz. It lists key performance figures such as 4 W typical input power, 80 W typical output power, and a total quiescent current of 1000 mA.
It also provides the PCB layout, standard land‑pattern dimensions, a full component list, and thermal design guidelines, including recommended heat‑sink resistance and temperature limits for reliable operation.
| Operating frequency range | 135‑175 MHz |
|---|---|
| Typical input power | 4 W |
| Typical output power | 80 W |
| Total quiescent current | 1000 mA (500 mA per FET) |
| Operating current | ≈10 A |
| Board dimensions | 75 mm × 46 mm |
| Substrate total thickness | 1.6 mm |
| Recommended heat‑sink thermal resistance | < 0.88 °C/W |
The amplifier operates from 135 MHz to 175 MHz.
The board delivers a typical output power of 80 W.
The heat‑sink thermal resistance should be well below 0.88 °C/W.
The board measures 75 mm in length and 46 mm in width.