This is a datasheet of 512Mb I-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free (RoHS compliant).
This datasheet provides the ordering information, key features, mechanical dimensions, pinout, and electrical characteristics of Samsung's 512 Mb I‑die DDR2 SDRAM devices (part numbers K4T51043QI, K4T51083QI, K4T51163QI). The device is offered in 60‑ball FBGA (x4/x8) and 84‑ball FBGA (x16) packages and complies with RoHS requirements.
The document lists supported speed grades (DDR2‑1066, DDR2‑800, DDR2‑667), programmable CAS latency options, burst lengths, voltage specifications, and timing parameters. It also includes absolute maximum ratings, AC/DC operating conditions, and detailed IDD power specifications.
| Capacity | 512 Mb |
|---|---|
| Speed Grades | DDR2‑1066 (7‑7‑7), DDR2‑800 (5‑5‑5, 6‑6‑6), DDR2‑667 (5‑5‑5) |
| Operating Voltage | 1.8 V ± 0.1 V |
| CAS Latency Options | 3 to 7 (programmable) |
| Burst Length | 4 or 8 |
| RoHS Compliance | Lead‑free, halogen‑free, RoHS compliant |
It supports DDR2‑1066 (7‑7‑7), DDR2‑800 (5‑5‑5 or 6‑6‑6), and DDR2‑667 (5‑5‑5).
The recommended supply voltage is 1.8 V ± 0.1 V.
Yes, it is lead‑free, halogen‑free, and RoHS compliant.