Industrial

EMA3 / UMA3N / FMA3A are ROHM's integrated digital transistors with built-in bias resistors, with a maximum collector-emitter reverse voltage of -50V and a maximum collector current of -100mA.

EMG4 / UMG4N / FMG4A is a NPN 100mA 50V complex digital transistor produced by ROHM, which has built-in bias resistors and completely isolated thin film resistors. It can be used in switch circuits, interface circuits and driver circuits.

EMB6 / UMB6N is a PNP complex digital transistor produced by ROHM company. Its maximum output current is -100mA and its maximum supply voltage is -50V. The transistor has built-in bias resistors, which do not require external input resistors to form an inverter circuit. In addition, the transistor also has a completely isolated thin-film resistor that can achieve negative bias input and completely eliminate parasitic effects.

The RF2046 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified. With a goal of enhanced reliability, the extremely small Micro-X ceramic package offers significantly lower thermal resistance than similar size plastic packages.

IMT17 is a general purpose dual transistor used for general small signal amplification. It features independent transistor elements, eliminating interference, and has high collector current. The product has the same external dimensions as the SMT3 package, so the same mounting machine can be used. Installation cost and area are reduced by half.

Intersil 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

This document describes the features and dimensions of the general purpose dual transistor products EMT18 / UMT18N / IMT18 produced by ROHM. The product has two 2SA2018 chips and can be mounted using EMT3, UMT3 or SMT3 automatic mounting machines. The transistor elements are independent, eliminating interference. The product has an epitaxial planar type PNP silicon transistor structure.

EMT1 / UMT1N / IMT1A Transistors are epitaxial planar type PNP silicon transistors with excellent stability and reliability.

REG113 is a family of low-noise, low-dropout linear regulators with low ground pin current. Its new DMOS topology provides significant improvement over previous designs, including low-dropout voltage (only 250mV typ at full load), and better transient performance. In addition, no output capacitor is required to provide stability for the regulator, simplifying the design.

EMT2 / UMT2N / IMT2A is a dual-transistor general purpose transistor from ROHM with high voltage and high output characteristics, suitable for various applications.

EMT3 / IMT3A is a dual transistor produced by ROHM, with a collector power dissipation of 120mW and a maximum operating temperature of 150 °C. The package form is EMT6 and SMT6.

This document describes the features and characteristics of the REF02 precision voltage reference/temperature transducer, including 5V output, temperature voltage output, adjustment range, temperature stability, low noise, and low supply current.

IMT4 is a dual transistor from ROHM, which uses AMT package and has high breakdown voltage.

2.2 Watt DIP24 Single & Dual Output ECONOLINE DC/DC-Converter REC2.2- S_DRW/H1 Series features 2.2W DIP Package, 1kVDC Isolation, Regulated Output, Wide Input Range 2 : 1 and 4 : 1, UL94V-0 Package Material, Continuous Short Circuit Protection, Cost Effective, 100% Burned In, Efficiency to 84%

EMX1 / UMX1N / IMX1 is a NPN dual transistor produced by ROHM. It is packaged in an EMT or UMT or SMT package. It has the following features: Two 2SC2412K chips in an EMT or UMT or SMT package, which can be mounted using EMT3 or UMT3 or SMT3 automatic mounting machines. The transistor elements are independent, eliminating mutual interference. Installation cost and area can be halved.