The RF2046 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified. With a goal of enhanced reliability, the extremely small Micro-X ceramic package offers significantly lower thermal resistance than similar size plastic packages.
The RF2046 is a low‑cost, general‑purpose RF amplifier IC built on an advanced GaAs HBT process. It delivers about 22 dB small‑signal gain, a 3.8 dB noise figure, and up to 10 mW linear output power, operating from DC to 3000 MHz with a single‑supply voltage.
The device is supplied in a Micro‑X ceramic lead‑frame with 50 Ω input and output impedances. External bias resistors and a DC blocking capacitor are required. The handbook provides pin‑out details, absolute maximum ratings, reliability data, and an evaluation board schematic and layout.
| Frequency Range | DC to 3000 MHz |
|---|---|
| Small‑Signal Gain | 22.9 dB |
| Noise Figure | 3.8 dB |
| Linear Output Power | 10 mW |
| Operating Voltage | 3.0 V – 4.0 V |
| Operating Current | 35 mA |
| Maximum Junction Temperature | 109 °C |
| Mean Time Between Failures (25 °C) | 1.4×10⁷ years |
The RF2046 operates from DC up to 3000 MHz.
The device provides about 22 dB of small‑signal gain (22.9 dB at 100 MHz).
It runs from 3.0 V to 4.0 V and draws approximately 35 mA.
The RF2046 has four pins: RF IN (input), GND (ground), RF OUT (output and bias), and a second GND.