Intersil 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
This datasheet describes three N‑Channel power MOSFETs (RFG40N10, RFP40N10, RF1S40N10SM) built with Intersil's MegaFET process. They are intended for switching regulators, converters, motor drivers, relay drivers and other high‑current applications and can be driven directly from integrated circuits.
The document lists absolute maximum ratings, detailed electrical specifications, typical performance curves, and test circuit diagrams. Packaging options (TO‑247, TO‑220AB, TO‑263AB) and handling precautions such as ESD sensitivity are also included.
| Power Dissipation | 160 W |
|---|---|
| On‑Resistance (RDS(on)) | 0.040 Ω |
| Operating Temperature Range | -55 to 175 °C |
Yes, the devices are sensitive to electrostatic discharge and proper ESD handling procedures must be followed.