Industrial

This document describes the features and characteristics of BD241D, BD241E, BD241F NPN silicon power transistors.

The document introduces the fifth generation HEXFETs product from International Rectifier, which features logic-level gate drive, ultra-low on-resistance, and fast switching speed, making it suitable for a wide variety of applications. The product is available in surface mount and through-hole mounting packages, with power dissipation levels up to 1.5 watts in typical surface mount applications. The document also provides the parameters and performance indicators of the product.

The IRLML6402 is a P-channel MOSFET from International Rectifier with a rated maximum voltage of -20V, a rated maximum current of -3.7A and a rated maximum power of 1.3W. This MOSFET is packaged in SOT-23 and has extremely low on-resistance, low power consumption and is suitable for applications such as battery and load management.

This document describes the features and characteristics of the BCR164 PNP Silicon Digital Transistor, including its applications, pin configuration, maximum ratings, thermal resistance, and DC characteristics.

BCR10CM-8 is a 400 volt, 10 ampere triac. The triac uses glass passivation technology, has excellent surge capability and is selected for inductive loads. Applications include AC switches, heating, motor controls, lighting and solid state relays.

This is a product manual that introduces two PNP general-purpose transistors: BC859 and BC860

The product is a MOSFET with 44A, -100V, rDS(ON) = 0.055Ω, 100K RAD (Si) features, suitable for military and civilian space applications, with enhanced single event effects (SEE) immunity

The 2SC1815(L) is a high quality power amplifier produced by TOSHIBA. This product features high breakdown voltage, high current output capability, excellent linearity and low noise.

This document describes the features and characteristics of an automotive MOSFET product, including logic level, advanced process technology, ultra low on-resistance, high temperature operating capability, fast switching, and repetitive avalanche capability.

FS40SM-6 is a Nch power MOSFET produced by MITSUBISHI. The maximum voltage is 300V, the maximum current is 40A, the maximum power dissipation is 275W, and the working temperature is -55~+150℃.

This document provides an overview of the MITSUBISHI Nch POWER MOSFET FS100KMJ-03. The product is suitable for high-speed switching applications such as motor control, lamp control, solenoid control, and DC-DC converters. It features a range of electrical characteristics and parameters.

FR301-FR307 are 3 amp fast recovery rectifiers with low cost, low leakage, low forward voltage drop, high current capability, high switching speed, and can be used in various circuits.

BAT42WS, BAT43WS, BAT54WS are surface mount Schottky barrier diodes with a maximum reverse voltage of 30V and a maximum average forward current of 0.2A. Product features include low turn-on voltage, fast switching, and PN junction guard ring.