This document describes the features and characteristics of the BCR164 PNP Silicon Digital Transistor, including its applications, pin configuration, maximum ratings, thermal resistance, and DC characteristics.
The document describes the BCR164 series, which includes models BCR164F, BCR164L3, and BCR164T. These are PNP silicon digital transistors featuring a built-in bias resistor (Ry = 4.7kΩ, Ro = 10kΩ) designed for use in switching circuits, inverters, interface circuits, and driver circuits.
The datasheet details maximum ratings such as collector-emitter voltage of 50V and total power dissipation up to 250mW depending on the specific model. It also provides comprehensive electrical characteristics including DC current gain, saturation voltages, transition frequency (up to 160 MHz), and thermal resistance values.
| Device Type | PNP Silicon Digital Transistor |
|---|---|
| Collector-emitter voltage (VcEO) | 50 V |
| Total power dissipation (BCR164F, Tg < 128°C) | 250 mW |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (fr) | 160 MHz |
The device supports a maximum collector current of 100 mA.
The BCR164F can dissipate a maximum of 250 mW when the temperature is less than 128°C.
The typical input resistor R4 has a value of 4.7 kΩ.