This document describes the features and characteristics of BD241D, BD241E, BD241F NPN silicon power transistors.
This document provides technical specifications for the Power Innovations BD241D, BD241E, and BD241F series of NPN silicon power transistors. The devices are designed with a continuous collector current rating of 3A and a peak collector current of 5A.
| Continuous Collector Current (Ic) | 3 A |
|---|---|
| Peak Collector Current (Icm) | 5 A |
| Collector-Emitter Voltage (Vceo) - BD241E | 140 V |
| Collector-Emitter Voltage (Vceo) - BD241F | 160 V |
| Continuous Device Dissipation at 25°C Case Temp | 40 W |
| Operating Junction Temperature Range (Tj) | -65 to +150 °C |
The BD241D, BD241E, and BD241F are available in a TO-220 plastic flange-mount package.
Yes, Pin 2 is in electrical contact with the mounting base.