The product is a MOSFET with 44A, -100V, rDS(ON) = 0.055Ω, 100K RAD (Si) features, suitable for military and civilian space applications, with enhanced single event effects (SEE) immunity
The document describes the FSJ9160D and FSJ9160R series of enhancement-mode silicon-gate power field-effect transistors (P-Channel Power MOSFETs). These devices are specifically engineered to be radiation tolerant, featuring immunity to Single Event Effects (SEE), including Single Event Gate Rupture (SEGR) and Total Dose up to 100K RAD(Si). They are suitable for harsh space environments as well as commercial and military applications such as switching regulators, motor drives, and relay drivers.
| Continuous Drain Current | 44 A |
|---|---|
| On-State Resistance (Typ) | 0.055 Ohm |
| Package Type | TO-254AA |
The devices meet pre-RAD specifications up to 100K RAD (Si).
Yes, they feature Enhanced Power MOSFET immunity to Single Event Effects (SEE), including SEGR.