Industrial

This document is the user manual of FDH50N50/FDA50N50 500V N-Channel MOSFET device, introduces the characteristics, features and application scenarios of the device.

The FDH44N50 is a 44A, 500V, 0.12 Ohm, N-channel SMPS power MOSFET that is used in PFC Boost, Two-Switch Forward Converter, Single Switch Forward Converter, Flyback Converter, Buck Converter, and other high-speed switching power supplies.

FDB3632/FDP3632/FDI3632/FDH3632 is a N-channel power MOSFET produced by Fairchild Semiconductor Corporation, with low on-resistance, low Miller charging, low QRR body diode, and AEC Q101 qualified.

The FDH3595 is a high conductance low leakage diode produced by Fairchild Semiconductor Corporation. Its maximum working temperature is 175℃, the maximum reverse working voltage is 125V, the maximum average rectified current is 200mA, and the maximum peak forward current is 600mA.

This document introduces the FDH34N40 product released by Fairchild Semiconductor Corporation in 2002. The product is an N-channel SMPS power MOSFET suitable for various switch mode power supply applications. It features low gate charge Qg, improved gate, avalanche and high reapplied dv/dt ruggedness, reduced rDS(ON), reduced Miller capacitance and low input capacitance, improved switching speed with low EMI, and a rated junction temperature of 175°C.

FDLL300/A / 333 is a high conductance low leakage diode sourced from Process 1M. Its features are a wide operating temperature range and large working current, with a maximum current of up to 500 mA.

FDH27N50 is a 27A, 500V, 0.19 ohm, N-channel SMPS power MOSFET manufactured by Fairchild Semiconductor Corporation.

FDH20N40/FDP20N40 is a N-channel MOSFET produced by Fairchild Semiconductor Corporation. Its rated voltage is 400V and its rated current is 20A. It has low gate charge Qg, high withstand voltage, high switching speed and low EMI.

This document describes the features and characteristics of the FDH15N50 / FDP15N50 / FDB15N50 products, including low gate charge Qg, improved gate, avalanche and high reapplied dv/dt ruggedness, reduced rDS(ON), reduced Miller capacitance and low input capacitance, improved switching speed with low EMI, etc. The product is suitable for switch mode power supplies (SMPS) applications, such as PFC Boost, Two-Switch Forward Converter, Single Switch Forward Converter, Flyback Converter, Buck Converter, and High Speed Switching.

FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 is a N-channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. It features low rDS(ON), low Qg(tot), low QRR and UIS capability. The product is used in 42V automotive load control, starter/alternator systems, electronic power steering systems, electronic valve train systems, DC-DC converters and off-line UPS, distributed power architecture and VRMs, and primary switch for 24V and 48V systems.

FDH038AN08A1 is a N-channel power tube produced by Fairchild Semiconductor Corporation. Its main features are RDS(ON) = 3.5mΩ, Vgs = 10V, ID = 80A, Qg(tot) = 125nC, Vgs = 10V, internal gate resistor Rg = 20Ω, with low Miller charge, low QRR body diode, UIS capability (single pulse and repetitive pulse) and meets AEC Q101 specifications.

6N138, 6N139 and HCPL-2730, HCPL-2731 are low input current, high gain split darlington optocouplers. This product has low current (0.5 mA), high CTR (2000%), high CMR (10 kV/µs) and high temperature stability (0-70°C).

This document introduces the features and characteristics of 6N138/9 and HCPL-2730/HCPL-2731 optocouplers, including low input current, high gain, high common mode voltage suppression ratio.