Industrial

100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.

400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.

A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.

100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

This document describes design aspects which should be considered for application circuits using NXP capacitive sensors.

This application note will illustrate the new features of the LPC11U6x device family compared to the LPC11U3x device family.

This application note is related to the installation procedures of the PTEV501B Board. It describes the board and the required actions to hand on quickly the Evaluation board.

This application note explains the unique auto-calibration feature of the touch sensor family from NXP and provides guidelines for enhanced water and condensation safe operation, focusing on applications with capacitive touch buttons

Planar PIN diode in a SOD323 (SC-76) small SMD plastic package.

Four planar PIN diode array in SOT363 small SMD plastic package.

This application note will illustrate the new features of the LPC11U6x device family compared to the LPC11U3x device family.

This application note describes the In-Application Programming capabilities of LPC11U6X. It also provides guidance to interrupt handling during flash IAP calls.

This application note describes the IEC60335 Class B certified library for the NXP ARM Cortex-M0 family members. All tests implemented and the library usage are described in detail.