Hitachi manuals, page 6
HITACHI 2SJ318(L) 2SJ318(S) handbook(1)(1)
2SJ318L is a P-channel MOSFET from NXP that is suitable for high-voltage switching applications. It features low on-resistance, high switching speed, and low drive current.
HITACHI 2SJ318(L) 2SJ318(S) handbook(1)
2SJ318(L), 2SJ318(S) is a silicon P-channel MOS FET with low on-resistance, high switching speed and low drive current, suitable for switching regulator, DC-DC converter and other applications.
HITACHI 2SJ319(L) 2SJ319(S) handbook
This document describes the application field and features of 2SJ319(L), 2SJ319(S) Silicon P-Channel MOS FET, including low on-resistance, high speed switching, low drive current, and suitability for switching regulators, DC-DC converters.
HITACHI 2SJ278 handbook
This document describes the application, features, and characteristics of the 2SJ278 Silicon P-Channel MOS FET, including high-speed power switching.
HITACHI 2SJ247 Silicon P-Channel MOS FET handbook
2SJ247 Silicon P-Channel MOS FET is used for high speed power switching, with features of low on-resistance, high speed switching, low drive current, and suitable for switching regulator, DC-DC converter.
HITACHI 2SJ248 Silicon P-Channel MOS FET handbook
This document describes the application and features of 2SJ248 Silicon P-Channel MOS FET, including low on-resistance, high speed switching, low drive current, etc. It is suitable for switching regulator, DC-DC converter.
HITACHI 2SJ217 handbook
2SJ217 is a P-channel MOSFET with low on-resistance, high switching speed, low drive current, etc. It is suitable for motor drive, DC-DC converter, power switch and solenoid drive applications.
HITACHI 2SJ218 handbook
2SJ218 is a high-performance power switching device with low on-resistance, high switching speed, 4V gate drive device, can be driven by 5V source, suitable for motor drive, DC-DC converter, power switch and solenoid drive applications.
HITACHI 2SJ220(L) 2SJ220(S) handbook
HITACHI 2SJ221 handbook
2SJ221 is a silicon P-Channel MOSFET designed for high-speed power switching applications. It features low on-resistance, high speed switching, low drive current, and can be driven from a 5V source. It is suitable for motor drive, DC-DC converter, power switch, and solenoid drive applications.
HITACHI 2SJ222 handbook
The 2SJ222 is a P-channel MOSFET from NXP that is suitable for motor drives, DC-DC converters, power switches and solenoid drives. The device features low on-resistance, high switching speed, low drive current and 4 V gate drive capability, which can be driven from a 5 V source.
HITACHI 2SJ244 Silicon P-Channel MOS FET handbook
2SJ244 is a silicon P-channel MOSFET with very low on-resistance and high-speed switching. It is suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
HITACHI 2SJ245(L) 2SJ245(S) handbook
HITACHI 2SJ181(L) 2SJ181(S) Silicon P-Channel MOS FET handbook
HITACHI 2SJ160 2SJ161 2SJ162 Silicon P-Channel MOS FET handbook
The document introduces the application and features of 2SJ160, 2SJ161, and 2SJ162 silicon P-Channel MOS FETs. These products are low-frequency power amplifier devices that can be used in conjunction with 2SK1056, 2SK1057, and 2SK1058. The features include good frequency characteristics, high-speed switching, wide area of safe operation, enhancement-mode, good complementary characteristics, and equipped with gate protection diodes. Suitable for audio power amplifier.