NPN Manuals - Page 2

NPN manuals, page 2

• NPN SILICON RF POWER TRANSISTOR TVV014 handbook

  The document provides information about the characteristics and performance of the ASI TVV014 NPN silicon RF power transistor. The transistor has maximum current and voltage ratings, making it suitable for high-frequency applications. It features the Omnigold™ metallization system and maximum power dissipation capability.

• NPN SILICON RF POWER TRANSISTOR TVV014A handbook

  This PDF file is about ASI TVV014A datasheet. It introduces the features and characteristics of the product, such as BVCEO, BVCER, BVEBO, ICES, hFE, PG, IMD1, etc.

• NPN SILICON RF POWER TRANSISTOR TVV020 handbook

  This is a specification sheet for the product ASITVV020 from Advanced Semiconductor, Inc. The product is an NPN silicon RF power transistor with a maximum operating current of 8.0A and a maximum power dissipation of 140W. It features the Omnigold™ metalization system, offering excellent performance and characteristics.

• NPN SILICON RF POWER TRANSISTOR TVV030 handbook

  This document is a specification table for ASI TVV030. It mainly introduces the maximum current, maximum voltage, maximum power consumption, maximum operating temperature and other parameters of the device.

• NPN SILICON RF POWER TRANSISTOR TVV030A handbook

  This datasheet lists the characteristics of ASI TVV030A, including BVCBO, BVCER, BVCEO, BVEBO, hFE, COB, PG, IMD1, etc.

• NPN SILICON RF POWER TRANSISTOR TVV100 handbook

  This is a NPN Silicon RF power transistor, with the features of input matching network and Omnigold™ metallization system.

• NPN SILICON RF POWER TRANSISTOR UFT15-28S handbook

  The ASI UFT15-28S is a NPN silicon RF power transistor designed with Omnigold™ metallization system. It has a maximum current rating of 10A, a maximum voltage rating of 60V and 35V, and a maximum power dissipation of 140W.

• NPN SILICON RF POWER TRANSISTOR UFT30-28 handbook

  The UFT30-28 is a silicon RF power transistor designed for Class A and B power amplifiers operating up to 500 MHz.

• NPN SILICON RF POWER TRANSISTOR TVU004 handbook

  The document describes the features and characteristics of the ASI TVU004 model, including maximum current, maximum voltage, maximum power, and other parameters.

• NPN SILICON RF POWER TRANSISTOR HF20-12S handbook

  The document describes the features and characteristics of the ASI HF20-12S model, including a minimum power gain of 18 dB, a maximum -30 dBc IMD3 at 20 W/30 MHz, and the Omnigold™ metalization system.

• NPN SILICON RF POWER TRANSISTOR HF50-12F handbook

  The ASI HF50-12F is a NPN silicon RF power transistor designed for FEATURES: • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 30 W(PEP) • Omnigold™ Metalization System

• NPN SILICON RF POWER TRANSISTOR HF50-12S handbook

  This document describes the features and characteristics of the ASI HF50-12S NPN Silicon RF Power Transistor, including maximum ratings for current, voltage, and power dissipation.

• NPN SILICON RF POWER TRANSISTOR HF100-12 handbook

  ASI HF100-12 is a NPN Silicon RF Power Transistor featuring: * PG=12 dB min. at 100 W/30 MHz. * IMD3=-30 dBc max. at 100 W(PEP). * Omnigold™ Metalization System.

• NPN SILICON RF POWER TRANSISTOR HF8-28F handbook

  ASI HF8-28F is a NPN silicon RF power transistor, whose features are: PG is 21 dB min. at 8 W/30 MHz, IMD3 is -30 dBc max. at 8 W(PEP).

• NPN SILICON RF POWER TRANSISTOR HF8-28S handbook

  This document describes the features and characteristics of the ASI HF8-28S model, including voltage and current parameters. The product features high power and low distortion.