NPN Manuals - Page 3

NPN manuals, page 3

• NPN SILICON RF POWER TRANSISTOR HF10-12F handbook

  The ASI HF10-12F is a NPN silicon RF power transistor with a maximum current of 4.5 A, maximum voltages of 36 V and 18 V, and maximum power of 80 W. It features a PG of 20 dB min. at 10 W/30 MHz and an IMD3 of -30 dBc max. at 10 W(PEP).

• NPN SILICON RF POWER TRANSISTOR HF5-12S handbook

  HF5-12S is a NPN silicon RF power transistor produced by ASI company, which has features such as PG = 20 dB min. at 5 W/30 MHz and IMD3 = -30 dBc max. at 5 W(PEP)

• NPN SILICON RF POWER TRANSISTOR HF5-12F handbook

  This document describes the characteristics and parameters of the ASI HF5-12F NPN Silicon RF Power Transistor.

• NPN SILICON RF POWER TRANSISTOR FMB175 handbook

  The document provides specifications for the FMB175 NPN SILICON RF POWER TRANSISTOR from Advanced Semiconductor. The product features include 65V BVCO, 36V VCEO, 4.0V VEBO, and 20A IC.

• NPN SILICON RF POWER TRANSISTOR FMB150 handbook

  This document is the specification of ASI FMB150. It introduces the features and characteristics of the product, including maximum current, maximum voltage, and maximum power.

• NPN SILICON RF POWER TRANSISTOR FMB075 handbook

  This document is about the product specifications of Advanced Semiconductor Inc. The document describes the features and characteristics of the NPN Silicon RF Power Transistor FMB075.

• NPN SILICON RF POWER TRANSISTOR CBSL150 handbook

  The CBSL150 is a NPN Silicon RF Power Transistor designed for 900MHz Class AB Cellular Base Station Amplifiers. It features Internal Input/Output Matching, PG = 9.0 dB Typical at 150W/900MHz, and Omnigold™ Metalization System.

• NPN SILICON RF POWER TRANSISTOR CBSL100 handbook

  The CBSL100 is a power transistor produced by ASI company. It has an input matching network and Omnigold metalization system. Its maximum current is 25A, maximum voltage is 60V and maximum power is 310W.

• NPN SILICON RF POWER TRANSISTOR CBSL60B handbook

  This file is the datasheet of ASI CBSL60B, which introduces the features and characteristics of the product, including BVCBO, BVCEO, BVEBO, IC, VCBO, VCEO, VEBO, PDISS, TJ, TSTG, θθJC, etc.

• NPN SILICON RF POWER TRANSISTOR CBSL30 handbook

  This data sheet provides CBSL30's characteristics parameters, including BVCBO, BVCER, BVCEO, BVEBO, ICBO, hFE, COB, PG, IMD3, VSWR1, VSWR2, OVD etc.

• NPN SILICON RF POWER TRANSISTOR CBSL15 handbook

  This document is the datasheet of ASI CBSL15. It introduces the features and characteristics of the product, including maximum ratings, test conditions, package dimensions, etc.

• NPN SILICON RF POWER TRANSISTOR CBSL6 handbook

  This document describes the features and characteristics of the ASI CBSL6 RF power transistor.

• NPN EPOXY SWITCHING AND GENERAL PURPOSE

  The document describes the features and characteristics of the ICminer.com Electronic-Library Service.

• NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 2N6714 2N6715

  2N6714 is a bipolar transistor from the 2N series with high gain and low noise characteristics. It is suitable for a variety of amplifier and switching circuits.

• NPN Silicon Epitaxia 2SD2403 Manual

  2SD2403 is an NPN silicon epitaxial transistor produced by kexin. It has the characteristics of high current capacitance and low collector saturation voltage.