Infineon manuals, page 5
lnfineon BTS 724G Manual
The product is an intelligent high-side power switch launched by Infineon. It uses a four-channel design, with a conduction resistance of 90 mΩ per channel, a rated load current of 3.3 A, and can provide switching control for 12V and 24V grounded loads. It has short circuit protection, overload protection, current limiting, thermal shutdown, overvoltage protection (including load dump), reverse battery protection, logic ground and load ground isolation, electrostatic discharge protection and other protection functions.
lnfineon BTS 723 GW Manual
PROFET BTS 723 GW is a high-side power switch produced by Infineon. It has two parallel channels and a switch resistance of 53mΩ. The rated load current is 4.2A. It integrates many protection functions, such as short circuit protection, overload protection, current limitation, thermal shutdown, undervoltage protection, etc.
lnfineon BTS 723 GW Guide
The BTS 723 GW is a high-side power switch from Infineon Technologies with two channels and 100mΩ status feedback. It is suitable for 42V voltage ranges.
lnfineon BTS721L1 Manual
This document describes the features and characteristics of the PROFET® BTS721L1 Semiconductor's smart four-channel high-side power switch, including overload protection, current limitation, short-circuit protection, thermal shutdown, and overvoltage protection.
lnfineon BTS721L1 Guide
lnfineon BTS 716G Manual
This document introduces a product called BTS 716G, which is a smart high-side power switch. It has four channels with status feedback, an operating voltage range of 5.5V to 40V, low standby current, and fast demagnetization function. The product is suitable for microcontroller-compatible high-side power switches and applications with 12V and 24V grounded loads.
lnfineon SPP18P06P SPB18P06P handbook
SPP18P06P SPB18P06P is a P-channel enhancement mode Schottky power transistor from Texas Instruments, which has high reverse diode dv/dt, 175°C operating temperature and low on-state resistance.
lnfineon SPP16N50C3 SPB16N50C3 SPI16N50C3 SPA16N50C3 handbook(1)(1)
Dinghao provides spot inventory, technical data, encyclopedia information, and hot news. This document describes the features and characteristics of SPP16N50C3, SPB16N50C3, SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor, including new high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitance, improved transconductance, etc.
lnfineon SPP16N50C3 SPB16N50C3 SPI16N50C3 SPA16N50C3 handbook(1)
This document describes the features and characteristics of SPP16N50C3, SPB16N50C3, SPI16N50C3, and SPA16N50C3 Cool MOS™ power transistors. These products adopt a new high-voltage technology and have ultra-low gate charge, periodic avalanche capability, extremely high dv/dt rating, ultra-low effective capacitance, and improved transconductance. The products are available in different packages and have different ordering codes. The document also provides the maximum ratings for each model, such as continuous drain current, pulsed drain current, avalanche energy, avalanche current, gate-source voltage, etc.
lnfineon SPP15P10P handbook
SPP15P10P is a P-channel enhancement mode small-signal transistor with avalanche and dv/dt ratings.
lnfineon SPP15P10P handbook(1)(1)
SPP15P10P is a P-channel enhancement mode MOSFET produced by Siemens. Its maximum voltage is -100V, the minimum on-resistance is 0.24 Ω, and the maximum current is -15A.
lnfineon SPP15P10P handbook(1)
This document describes the features and characteristics of the SPP15P10P SIPMOS small-signal transistor, including P-Channel, enhancement mode, avalanche rated, and dv/dt rated.
lnfineon SPP15P10P Data Sheet
lnfineon SPP15N60C3 SPI15N60C3 Data Sheet (1)(1)
15N60C3 is a high voltage power transistor from Texas Instruments with a maximum voltage rating of 650V and a maximum continuous current of 15A.
lnfineon SPP12N50C3 SPB12N50C3 SPI12N50C3 SPA12N50C3 Manual
SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 is a new high-performance power transistor with high-voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitance and improved transconductance