Infineon Manuals

SPP11N80C3, SPA11N80C3 is a new revolutionary high voltage technology power transistor, which features ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.

SPP11N80C3 SPA11N80C3 is a power transistor with new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitance and improved transconductance

This document introduces the technical data of a high-performance power combi controller named TDA 16888, including the features and characteristics of the PFC (Power Factor Correction) section and the PWM (Pulse Width Modulation) section. The PFC section complies with the IEC 1000-3 standard and has an additional operation mode as an auxiliary power supply, fast and soft switching totem pole gate drive (1 A), dual loop control, leading edge triggered pulse width modulation, peak current limitation, boost or flyback topologies for the PFC preconverter, continuous or discontinuous mode possible. The PWM section features improved current mode control, fast and soft switching totem pole gate drive (1 A), soft-start management, trailing edge triggered pulse width modulation, feed forward or flyback topologies for the PWM converter, maximum duty cycle of 50% to prevent transformer saturation, external synchronization possible. In addition, the product has high power factor, typical 50 µA start-up supply current, low quiescent current (15 mA), undervoltage lockout with internal stand-by operation, internally synchronized fixed operating frequency ranging from 15 kHz to 200 kHz, external synchronization, shutdown of both outputs externally triggerable, peak current limitation, overvoltage protection, average current sensing by noise filtering, etc.

BFP740F is a high gain, ultra low noise RF transistor that is ideal for a wide range of wireless applications, particularly for CDMA and WLAN applications. It has a noise figure of 0.5 dB at 1.8 GHz and 0.75 dB at 6 GHz. Furthermore, it features high maximum stable gain and high reliability.

BFP740F is a silicon germanium RF transistor from Dinghao Semiconductor. It features high gain and ultra low noise, making it suitable for wireless applications up to 10GHz and above, such as CDMA and WLAN.

BFP740 is a NPN silicon germanium RF transistor supplied by Dinghao, which has the characteristics of high gain, ultra-low noise, etc. It is suitable for various wireless applications in the range of 1.8GHz to 10GHz, such as CDMA and WLAN applications.

BFP740 is a RF transistor produced by Dinghao Electronic Components Co., Ltd. It uses silicon germanium technology and has the characteristics of high gain and low noise, which is very suitable for CDMA and WLAN wireless communication applications.

BFP650 is a NPN Silicon Germanium RF Transistor from Dinghao Electronics. It is used for high power amplifiers and low phase noise oscillators. The maximum gain is 21 dB at 1.8 GHz, the noise figure is 0.9 dB at 1.8 GHz, and it has gold metallization for high reliability. The fT is 70 GHz.

The BFP650 is a NPN Silicon Germanium RF transistor, mainly used in high power amplifiers and low phase noise oscillators, the maximum gain is 21 dB, noise figure is 0.9 dB, and the package is SOT343.

BFP540ESD is a NPN silicon RF transistor in stock at Dinghao. It has excellent ESD performance, typical value of 1000 V (HBM), outstanding Gms = 21.5 dB noise figure F = 0.9 dB, and gold metallization ensures the product's high reliability.

This document describes the features and characteristics of the BFP540 NPN Silicon RF Transistor, which is suitable for highest gain low noise amplifier at 1.8 GHz. It has an outstanding Gms = 21 dB and a Noise Figure F = 0.9 dB. The gold metallization design ensures high reliability.

The BFP540 is a NPN Silicon RF Transistor from Dinghao Electronics. It has an outstanding Gms = 21 dB Noise Figure F = 0.9 dB and is gold metallization for high reliability.

BFP520F is a NPN silicon RF transistor produced by SIEGET company. It has the characteristics of high gain, low noise, and high reliability. It is suitable for 1.8GHz and 2mA/2V RF low noise amplifiers, and also suitable for oscillators below 15GHz.

BFP520 NPN Silicon RF transistor, with the highest gain low noise amplifier characteristic, at 1.8GHz and 2mA/2V, Gms=23dB, Noise Figure F=0.95dB, can be used for oscillators up to 15GHz, transition frequency fT=45GHz, with gold metallization technology, with high reliability