Infineon manuals, page 9
infineon Uni- Bipolar Hall IC Switches for Magnetic Field Applications TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Bipolar IC
TLE 4905/35/35-2/45-2 are unipolar/bipolar magnetic field switches designed specifically for automotive and industrial applications. They feature temperature compensated magnetic performance, digital output signal, compatibility with unipolar and alternating magnetic fields, wide temperature range, reverse polarity protection, and output protection against electrical disturbances.
infineon XC167CI-16F 16-Bit Single-Chip Microcontroller with C166SV2 Core
This is a datasheet for the XC167CI-16F 16-bit single-chip microcontroller with C166SV2 core, produced by Infineon Technologies AG. It provides information about the features and characteristics of the product.
infineon HYS72T32000GR (256 MByte) HYS72T64001GR (512 MByte) HYS72T64020GR (512 MByte)
This document describes the HYS72T32000GR, HYS72T64001GR, and HYS72T64020GR low profile registered DIMM modules based on DDR2 technology. The modules have capacities of 256MB and 512MB and are designed for 240-pin connector sockets.
Infineon MEMORY SPECTRUM DATA SHEET
This document is about Infineon's Memory Spectrum product information, introducing various types of memory products, including DDR and DDR2 components and DIMM, CellularRAM, Mobile-RAM, Green DRAM, TwinNAND, SD Cards/MultiMediaCards, etc.
infineon SDT08S60 handbook
SDT08S60 thinQ!® SiC Schottky diode is the world's first 600V Schottky diode, using revolutionary semiconductor material - Silicon Carbide, with benchmark switching behavior, no reverse recovery, no temperature influence on the switching behavior, no forward recovery.
INFINEON SPP07N60C3 SPI07N60C3 SPA07N60C3 Manual
The SPP07N60C3, SPI07N60C3, and SPA07N60C3 are Cool MOS™ power transistors with 650 V VDS@Tjmax, 0.6 Ω RDS(on), and 7.3 A ID.
INFINEON IPI90R340C3 Manual
The IPI90R340C3 CoolMOS™ power transistor features the lowest figure-of-merit RON x Qg, extreme dv/dt rating, high peak current capability, qualification according to JEDEC1) for target applications, Pb-free lead plating compliant with RoHS, and worldwide best RDS,on in TO262 (I2Pak) package. It is designed for quasi resonant flyback/forward topologies, PC Silverbox and consumer applications, and industrial SMPS. The maximum ratings include continuous drain current, pulsed drain current, avalanche energy for single pulse and repetitive, avalanche current for repetitive, MOSFET dv/dt ruggedness, gate source voltage, power dissipation, and operating and storage temperature.
INFINEON BC856W...BC860W Manual
BC856W, BC857W, BC858W, BC859W and BC860W are PNP Silicon AF transistors. They are for AF input stages and driver applications. They feature high current gain, low collector-emitter saturation voltage and low noise between 30Hz and 15kHz. These PNP transistors are complementary types to BC846W, BC847W, BC848W, BC849W and BC850W (NPN).
INFINEON BCR523 Manual
BCR523 is a NPN silicon digital transistor suitable for switching circuits, inverters, interface circuits, and driver circuits. It has built-in bias resistors (R1=1kΩ, R2=10kΩ).
INFINEON SPP24N60C3 Manual
This product is a high voltage MOS power transistor with very low RDS(on) and very low capacitance, as well as very high dv/dt capability and very low gate charge.
INFINEON BAW56... Manual
This document describes the features and characteristics of the BAW56 silicon switching diode released on January 13, 2006. The diode is suitable for high-speed switching applications and has a common anode configuration. Specific models include BAW56S, BAW56U, BAW56T, and BAW56W.
INFINEON IPI90R500C3 Manual
IPI90R500C3 CoolMOS™ Power Transistor features the lowest RON x Qg, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant, ultra low gate charge.
INFINEON BSS 84 P Manual
This file is a summary of BSS84P SIPMOS Small-Signal-Transistor products, including product features, models, maximum ratings, electrical characteristics and other information.
INFINEON SPB11N60S5 Manual
SPB11N60S5 is a power transistor with a maximum voltage of 600V, a resistance of 0.38 ohms, and a current of 11 amps. This product has ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances and improved transconductance features.
INFINEON SKW20N60 Manual
SKW20N60 is a 600V, 20A IGBT product from Infineon, using NPT technology with a soft, fast-recovery anti-parallel EmCon diode. Compared with the previous generation, its Eoff is reduced by 75%, and its conduction loss is also lower. This product is suitable for applications such as motor controls and inverters.