Infineon manuals, page 19
INFINEON BSC042N03S Manual
The BSC042N03S OptiMOS®2 power transistor has fast switching, excellent current conduction, low on-resistance, excellent thermal resistance, and good dv/dt characteristics, which are suitable for notebook DC/DC converters and other applications.
INFINEON BSC059N03S Manual
INFINEON IPD20N03L IPU20N03L Manual
This datasheet mainly introduces the features and characteristics of IPD20N03L and IPU20N03L, including product model, package, maximum ratings, electrical characteristics, etc.
INFINEON IKA03N120H2 Manual
IKA03N120H2 is a power semiconductor device produced by Infineon. This device uses the second-generation HighSpeed technology and has a soft recovery, fast recovery anti-parallel EmCon HE diode. It is suitable for television horizontal line deflection.
INFINEON IPD50R399CP Manual
IPD50R399CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, Pb-free lead plating, and RoHS compliance. It is designed for hard and softswitching SMPS topologies, DCM PFC for lamp ballast, and PWM for lamp ballast and PDP/LCD TVs.
INFINEON FS50R12KE3 Manual
This document is about FS50R12KE3 IGBT-Modules technical information, it includes various characteristics parameters of this product.
INFINEON BUP 313D Manual
BUP 313D IGBT is an IGBT with an integrated diode, with low forward voltage drop, high switching speed, low tail current, latch-up free and high reliability.
INFINEON SK-XC866 Easy Kit Manual
INFINEON TLE 4240 G Manual
The TLE 4240 G is a monolithic integrated low-drop LED Driver in the very small SMD package SCT 595. It is designed to supply LEDs under the severe conditions of automotive applications. The output is a constant current source which drives LEDs to 60 mA within an accuracy of ± 20%.
INFINEON BSS670S2L Manual
BSS670S2L is a N-channel enhancement mode logic level MOSFET produced by ON Semiconductor. Its maximum voltage is 55V, the minimum on-resistance is 650mΩ, and the maximum current is 0.54A.
INFINEON SPP20N65C3/SPA20N65C3/SPI20N65C3 Manual
SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor features 650 V VDS and 0.19 Ohm RDS(on), the lowest RDS(on) in TO-220 worldwide. It also has ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability and improved transconductance.
INFINEON SPS01N60C3 Manual
This datasheet mainly introduces the features and characteristics of SPS01N60C3 Cool MOS™ power transistor
INFINEON SPP20N60S5 Cool MOS Power Transistor Manual
This PDF file is the datasheet of SPP20N60S5 Cool MOS™ Power Transistor. The product has the following features: new revolutionary high voltage technology, world's best RDS(on) in TO 220, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.
INFINEON SPW20N60S5 Cool MOS Power Transistor Manual
SPW20N60S5 is a high voltage MOSFET with a maximum voltage of 600V and a maximum current of 20A. It has ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances and improved transconductance.
INFINEON IKA10N60T Manual
IKA10N60T is an IGBT from Infineon with a very low Vce(sat) of 1.5V, a maximum junction temperature of 175°C and a short circuit withstand time of -5µs. This product is suitable for applications such as washing machines, air conditioners, inverters and variable speed drives.