Infineon manuals, page 24
INFINEON XC164SM Manual
This is a 16-bit single-chip microcontroller
INFINEON IPP60R299CP Manual
IPP60R299CP CoolMOSTM Power Transistor is a low RonxQg, ultra low gate charge, extreme dv/dt rated, high peak current capability power transistor.
INFINEON BSP171P Manual
BSP171P SIPMOS® Small-Signal-Transistor is an enhancement mode P-channel device with logic level, avalanche rated, dv/dt rated and Pb-free lead plating, RoHS compliant.
INFINEON IPI90R1K0C3 Manual
The IPI90R1K0C3 CoolMOS™ power transistor features the lowest figure-of-merit RON x Qg, extreme dv/dt rating, high peak current capability. It is designed for quasi resonant flyback/forward topologies, PC Silverbox and consumer applications, and industrial SMPS.
INFINEON BC856...BC860 Manual
BC856, BC857, BC860 are three PNP silicon AF transistors with high current gain, low collector-emitter saturation voltage and low noise, suitable for AF input stages and driver applications.
INFINEON SPP21N50C3/SPI21N50C3/SPA21N50C3 Manual
The SPP21N50C3, SPI21N50C3 and SPA21N50C3 are Cool MOS™ power transistors that feature the world's best RDS(on) and ultra low effective capacitances. These transistors have periodic avalanche rating, extreme dv/dt rating, ultra low gate charge and improved transconductance.
INFINEON IPA90R500C3 Manual
The IPA90R500C3 CoolMOS™ Power Transistor features the lowest RON x Qg, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant, ultra low gate charge CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, Industrial SMPS
INFINEON IPI60R199CP Manual
IPI60R199CP CoolMOSTM Power Transistor is specially designed for hard switching topologies for Server and Telecom applications. It features lowest figure-of-merit RONxQg, ultra low gate charge and extreme dv/dt rating, as well as high peak current capability.
INFINEON BAV99... Manual
BAV99 is a silicon switching diode launched by ON Semiconductor. It has the characteristics of high switching speed, high breakdown voltage and low power consumption. It is suitable for applications such as high-frequency switching power supply, battery charger, DC/DC converter
INFINEON IKW25T120 Manual
IKW25T120 is a low loss DuoPack IGBT from Infineon, which is produced using TrenchStop and Fieldstop technology and features a soft, fast recovery anti-parallel EmCon HE diode.
INFINEON BSP125 Manual
This document provides detailed information on the BSP125 SIPMOS power transistor, including product features, model, parameters, and packaging.
INFINEON SPW11N80C3 Manual
This document is a specification sheet for a product, describing its features and characteristics, including operating voltage, temperature range, current, etc.
INFINEON SPP08N80C3 SPA08N80C3 Manual
SPP08N80C3 SPA08N80C3 is a low on-resistance, ultra low gate charge, high isolation power transistor, with a maximum voltage of 800V and a rated current of 8A.
INFINEON - PROFET BTS721L1 Manual
This datasheet introduces the features and characteristics of the PROFET® BTS721L1 four-channel high-side power switch, including overload protection, current limiting, short-circuit protection, thermal shutdown, overvoltage protection (including load dump) and fast demagnetization of inductive loads.
INFINEON - BFR380F Manual
This document describes the features and characteristics of the BFR380F NPN silicon RF transistor, such as high current capability, low noise figure, and low voltage operation. It is ideal for wide dynamic range applications and low phase noise oscillators up to 3.5 GHz.