Infineon manuals, page 17
infineon BTS650P handbook
The BTS650P is a high-side high current power switch with the following features: overload protection, current limiting, short circuit protection, overtemperature protection, overvoltage protection (including load dump), output negative voltage clamp, fast deenergizing of inductive loads, low ohmic inverse current operation, Reversave (Reverse battery protection), diagnostic feedback with load current sense, open load detection via current sense, loss of Vbb protection, electrostatic discharge protection.
INFINEON BAR50... Manual
BAR50 series is a silicon PIN diode produced by Texas Instruments. It has low capacitance, low forward resistance and low harmonics, which is suitable for RF switch and attenuating applications.
INFINEON SMBT2222A/MMBT2222A Manual
This document describes the features and characteristics of the SMBT2222A/MMBT2222A NPN silicon switching transistor released in 2006, including high DC current gain and low collector-emitter saturation voltage.
INFINEON IPA60R125CP Manual
IPA60R125CP CoolMOS is the world’s smallest N-channel MOSFET with a RDS(on) of 0.125 Ω. It features ultra-low gate charge, extreme dv/dt rating, high peak current capability and is qualified according to JEDEC for target applications and is Pb-free lead plating and RoHS compliant.
INFINEON SPP08N80C3 SPI08N80C3 SPA08N80C3 Manual
SPP08N80C3, SPI08N80C3 SPA08N80C3 is a 800 V low on-resistance, high current power transistor, using new revolutionary high voltage technology, features ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra-low effective capacitances and improved transconductance.
INFINEON SPD07N60C3/SPU07N60C3 Manual
This document is about the specifications of a certain product, including the rated input voltage, rated output voltage, maximum output current, operating temperature range, maximum conversion efficiency, etc.
INFINEON BTS 5235-2G Manual
This document is a product description document for BTS 5235-2G Smart High-Side Power Switch. It introduces the features and characteristics of the product, including package, pin definition, electrical characteristics, circuit principle, etc.
INFINEON SPP11N60C3 SPI11N60C3 SPA11N60C3 Manual
SPP11N60C3 SPI11N60C3, SPA11N60C3 is a new high voltage technology power transistor with ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability and improved transconductance.
INFINEON IPW60R099CP Manual
The IPW60R099CP CoolMOSTM power transistor features the lowest figure-of-merit RON x Qg, extreme dv/dt rating, high peak current capability, and is qualified according to JEDEC standards for target applications.
INFINEON IPP50R199CP Manual
IPP50R199CP CoolMOSTM power transistor features the lowest figure-of-merit RON x Qg, ultra-low gate charge, extreme dv/dt rated, high peak current capability, and is compliant with RoHS. It is designed for hard and soft switching SMPS topologies, CCM PFC, and PWM applications.
INFINEON Preliminary PMA51xx PMA71xx Manual
This document is a preliminary ROM Library Function Guide for the PMA51xx / PMA71xx RF Transmitter IC, describing the features and characteristics of the product, including the embedded 8051 microcontroller, LF 125kHz ASK receiver, and FSK/ASK 315/434/868/915 MHz transmitter.
INFINEON C868 Manual
This is a data sheet about C868 8-Bit Single-Chip Microcontroller
INFINEON BTS 5246-2L Manual
This document is a technical data sheet for the BTS 5246-2L Smart High-Side Power Switch, providing information on the features and characteristics of the product.
INFINEON IPB60R199CP Manual
IPB60R199CP CoolMOS TM Power Transistor Features: Lowest figure-of-merit RONxQg; Ultra low gate charge; Extreme dv/dt rated; High peak current capability; Qualified according to JEDEC1) for target applications; Pb-free lead plating; RoHS compliant. CoolMOS CP is specially designed for hard switching topologies, for server and telecom applications.
INFINEON IPA50R140CP Manual
The features of the CoolMOSTM power transistor include the worldwide best RDS(on) in TO220, lowest figure of merit RON x Qg, ultra-low gate charge, extreme dv/dt rated, high peak current capability, etc.