Infineon manuals, page 23
INFINEON SPD08N50C3 Manual
SPD08N50C3 is a new type of MOS power transistor launched by Infineon. It features extremely low RDS(on), extremely low gate charge, extreme dv/dt rating, extremely low effective capacitance and improved transconductance.
INFINEON BAR81... Manual
BAR81 is a shunt RF switching diode produced by Rogers Corporation. It has the characteristics of high shunt signal isolation and low shunt insertion loss, and is widely used in high performance RF switches.
INFINEON SPP12N50C3 SPI12N50C3 SPA12N50C3 Manual
This document describes the features of SPP12N50C3, SPI12N50C3, and SPA12N50C3 Cool MOS™ power transistors. These transistors utilize a revolutionary high voltage technology and have ultra low gate charge, periodic avalanche rating, and extreme dv/dt rating. Additionally, they have ultra low effective capacitances, improved transconductance, and fully isolated packaging. The document also lists the model numbers, packages, and ordering codes of these products, as well as their maximum ratings and thermal characteristics.
INFINEON IPP90R340C3 Manual
IPP90R340C3 CoolMOS™ power transistor features the lowest RON x Qg figure of merit and extreme dv/dt rating with high peak current capability. It is qualified according to JEDEC1) for target applications and compliant with RoHS. It features lead-free lead plating and offers the world's best R DS,on and ultra-low gate charge. CoolMOS™ 900V is designed for: quasi resonant flyback/forward topologies, PC silverbox and consumer applications, and industrial SMPS.
INFINEON SPD03N50C3 Manual
INFINEON BFG235 Manual
The document describes the features and characteristics of the 2005-10-11 BFG235 1 NPN Silicon RF Transistor, which is suitable for low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz, and has an integrated emitter ballast resistor.
INFINEON SPP04N50C3/SPA04N50C3 Manual
The document describes the features and characteristics of a product named VDS.
INFINEON Wireless Components ASK/FSK 915MHz Single Conversion Receiver TDA 5212 Version 1.3 Manual
This document is the specification of TDA 5212
INFINEON IPA60R299CP Manual
This document describes the features and characteristics of the IPA60R299CP CoolMOS® power transistor, including the lowest figure-of-merit RONxQg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, etc.
INFINEON SPA15N65C3 CoolMOS Power Transistor Manual
This document introduces the characteristics of SPA15N65C3 CoolMOSTM power transistor, including low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications and lead-free lead plating; RoHS compliant.
INFINEON - IPW50R199CP handbook
IPW50R199CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rated, high peak current capability, Pb-free lead plating; RoHS compliant and qualified according to JEDEC for target applications.
INFINEON - BFP620 handbook
This document describes the features and characteristics of the BFP620 Apr-21-2004 1 NPN Silicon Germanium RF Transistor. It is suitable for a wide range of wireless applications, especially CDMA and WLAN applications. The noise figure is outstanding with 0.7 dB at 1.8 GHz and 1.3 dB at 6 GHz. The maximum stable gain is 21.5 dB at 1.8 GHz and 11 dB at 6 GHz. The transistor is equipped with gold metallization for extra high reliability.
INFINEON SN7002W handbook
SN7002W is a N-channel enhancement mode logic level dv/dt rated small signal transistor with a maximum voltage of 60V, an RDS(on) of 5 ohms and an ID of 0.23 A.
INFINEON SPP06N60C3 Manual
SPP06N60C3 CoolMOSTM Power Transistor is a high performance power transistor with ultra low gate charge, periodic avalanche rated, high peak current capability, ultra low effective capacitances and extreme dv/dt rated.
INFINEON FZ600R12KE3 Manual
This document provides technical information about the FZ600R12KE3 IGBT module, including maximum rated values and characteristic values.