BSI Manuals - Page 2

BSI manuals, page 2

• BSI BS616LV2017 Data Sheet

  This file introduces the characteristics of BS616LV2017 128K X 16 bit memory, including operating voltage, operating current, access time, etc.

• BSI Very Low Power/Voltage CMOS SRAM BS616LV1622 Manual

  The BS616LV1622 is a high-performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC . This device provide three control inputs and three states output drivers for easy memory expansion. The BS616LV1622 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1622 is available in 48-pin 12mmx20mm TSOP1 package.

• BSI BS616LV4017 DATA SHEET

  BS616LV4017 is a high performance, low power 256Kx16-bit CMOS static random access memory. This device has 16 address lines and 16 data lines, supports 55ns and 70ns access time, can work at the power supply voltage of 2.4V~5.5V, and the working temperature range is -40℃~+85℃.

• BSI BS616LV1010 Manual

• BSI BS62LV256 Manual

• BSI (BRILLIANCE SEMICONDUCTOR) - Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 R0201-BS62LV1600 Revision 2.2 Jan Manual

  BS62LV1600 is a low-power CMOS SRAM from Fujitsu. It operates from a wide range of 2.4V to 5.5V supply voltage, with typical standby current of 1.5uA and maximum access time of 55ns.

• BSI BS62LV2006 Very Low Power CMOS SRAM handbook

  The BS62LV2006 is a high performance, very low power CMOS Static Random Access Memory with a wide range of operating voltage and high speed access time. It utilizes advanced CMOS technology and circuit techniques to provide high speed and low power features.

• BSI BH62UV8001 Ultra Low Power/High Speed CMOS SRAM handbook

  BH62UV8001 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 8 bits and operates in a wide range of 1.65V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at 1.65V/85OC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BH62UV8001 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BH62UV8001 is available in DICE form and 48-ball BGA package.

• BSI BS616LV8016 Data Sheet

  The BS616LV8016 is a 512K x 16-bit low-power CMOS SRAM. It features a 2.4V ~ 5.5V wide power range, 0.8uA typical standby current, 55ns maximum access time, and an automatic power down feature.