Philips manuals, page 77
philips PBSS4350SA 50 V low VCEsat NPN transistor handbook
This document describes the features and characteristics of the PBSS4350SA low VCEsat NPN transistor, including low collector-emitter saturation voltage VCEsat and corresponding equivalent resistance RCEsat, high collector current capability IC and ICM, high collector current gain hFE, and less heat generation leading to higher efficiency. This transistor is suitable for low and medium power DC/DC converters, low voltage regulation (LDO), MOSFET drivers, supply line switching, and battery chargers.
philips PBSS4350T 50 V low VCEsat NPN transistor handbook
This document describes the features and characteristics of the PBSS4350T 50V low VCEsat NPN transistor, including low collector-emitter saturation voltage VCEsat and corresponding low equivalent on-resistance RCEsat, high collector current capability, high collector current gain, and improved efficiency due to reduced heat generation. The transistor is suitable for power management applications, low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO).
philips PBSS4350Z 50 V low VCEsat NPN transistor handbook
philips PBSS4240Y 40 V low VCEsat NPN transistor handbook
PBSS4240Y is a high-performance 40V low Vcesat NPN transistor. It features low collector-emitter saturation voltage, high current capability and enhanced performance. It is widely used in supply line switching circuits, battery management applications, DC/DC converter applications, strobe flash units and heavy duty battery powered equipment (motor and lamp drivers).
philips PBSS4240V 40 V low VCEsat NPN transistor handbook
PBSS4240V is a low VCEsat and high current capability NPN transistor suitable for power management and peripheral driver applications.
philips PBSS4240T 40 V low VCEsat NPN transistor handbook
PBSS4240T is a 40V low VCEsat NPN transistor with low collector-emitter saturation voltage, high current capability and improved device reliability. It can be used in supply line switching circuits, battery management applications, DC/DC converter applications, strobe flash units and heavy duty battery powered equipment (motor and lamp drivers).
philips PBSS4240DPN 40 V low VCEsat NPN/PNP transistor handbook
PBSS4240DPN is a low VCEsat NPN/PNP transistor produced by Philips Semiconductors. It has the characteristics of low collector-emitter saturation voltage, high collector current capability, high collector current gain, high efficiency and so on. It is widely used in power management and peripheral driver applications.
philips PBSS4230T 30 V 2 A NPN low VCEsat (BISS) transistor handbook
PBSS4230T is a 30 V, 2 A NPN low VCEsat (BISS) transistor, features low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency, reduced printed-circuit board requirements and cost effective alternative to MOSFETs in specific applications.
philips PBSS4160T 60 V 1 A NPN low VCEsat (BISS) transistor handbook
This document describes the features and characteristics of the PBSS4160T, which is a 60V, 1A NPN low VCEsat (BISS) transistor.
philips PBSS4140V 40 V low VCEsat NPN transistor handbook
This is a low Vcesat NPN transistor with the features of low power dissipation, small package, high current capability. The transistor is suitable for general purpose switching and muting, LCD backlighting, supply line switching circuits and battery driven equipment (such as mobile phones, video cameras and hand-held devices).
philips PBSS3540M 40 V 0.5 A PNP low VCEsat (BISS) transistor handbook
This document describes the features and characteristics of the PBSS3540M, a 40V, 0.5A PNP low VCEsat (BISS) transistor. It includes low collector-emitter saturation voltage, high collector current capability, high efficiency, and reduced printed-circuit board requirements. It is suitable for power management and peripheral driver applications.
philips PBSS4120T 20 V 1 A NPN low VCEsat (BISS) transistor handbook
PBSS4120T is a 20V, 1A NPN low VCEsat (BISS) transistor. It features low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency leading to less heat generation, reduced printed-circuit board requirements, and is a cost-effective alternative to MOSFETs in specific applications. It is suitable for power management, peripheral driver, etc.
philips PBSS4130T 30 V 1 A NPN low VCEsat (BISS) transistor handbook
PBSS4130T is a 30V, 1A NPN low VCEsat (BISS) transistor, featuring low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency, low heat generation, reduced printed-circuit board requirements and a cost effective alternative to MOSFETs in specific applications.
philips PBSS4140DPN 40 V low VCEsat NPN/PNP transistor handbook
This datasheet introduces the features of PBSS4140DPN low Vcesat NPN/PNP transistor, including 600 mW total power dissipation, low collector-emitter saturation voltage, high current capability, etc.
philips PBSS4140S 40 V low VCEsat NPN transistor handbook
pbss4140s is a low vcesat npn transistor launched by philips, which has the characteristics of high power dissipation, ultra low collector-emitter saturation voltage, 1a continuous current, high current switching, etc., and is widely used in medium power switching and muting, linear regulators, dc/dc converters, lcd backlighting, supply line switching circuits and other fields.