SAMSUNG Manuals

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This datasheet introduces the features of K9F1G08U0A and K9F1G08Q0A NAND flash memory

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Datasheet

K9F1608W0A-TCB0, K9F1608W0A-TIB0 FLASH MEMORY is a 2Mx8Bit NAND Flash Memory produced by Samsung Electronics of Korea.

2M x 8-bit NAND Flash Memory for solid state mass storage market. The flash has 264-byte page program and 4K-byte block erase function.

This datasheet provides detailed information on 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory, including product parameters, package form, pin diagram, etc.

This document is about the technical information of the 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory produced by SAMSUNG Electronics. The document introduces the specifications and features of the product, and provides revision history and contact information.

K9F1208U0A and K9F1216U0A are 64M x 8 bit and 32M x 16 bit NAND flash memory chips produced by Samsung Electronics, supporting 1.8V and 3.3V power supply.

The document provides technical information and features of three models of Samsung flash memory products: K9F1208R0C, K9F1208U0C, and K9F1208B0C.

The K4S643232C is a 67,108,864-bit synchronous high-data-rate dynamic random-access memory organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG's high-performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

The K4S560432E / K4S560832E / K4S561632E is a 268,435,456 bit synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth applications.

The document details the Samsung 256Mb E-die SDRAM model, frequency, interface, package, etc.

K4S283233F is a synchronous high data rate Dynamic RAM with features such as 3.0V & 3.3V power supply, LVCMOS compatible with multiplexed address, four banks operation, and MRS cycle with address key programs, etc.