SAMSUNG Manuals

This document is a preview version of SAMSUNG 128Mb F-die SDRAM Specification, which provides detailed information on the features and characteristics of the product

This document is a technical specification for K4S280432F/K4S280832F/K4S281632F, which introduces the features and characteristics of the product, including storage capacity, interface, package, etc.

128Mb F-die SDRAM Specification

This is a user manual for Samsung SCH-i929, which introduces the features and characteristics of the device.

This document introduces three SDRAM products, namely K4S280432E, K4S280832E, and K4S281632E. They are synchronous high data rate Dynamic RAMs fabricated with Samsung's high performance CMOS technology. These products feature precise cycle control and programmable burst length and latencies, making them suitable for a variety of high bandwidth, high performance memory systems.

This document is about 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL. It describes the features and characteristics of the product in detail.

The document describes the features and characteristics of CMOS SDRAM K4S280432D, including its storage capacity, structure, operating frequency, and power supply.

This document introduces the datasheet of K4S280432C CMOS SDRAM, including the product features, characteristics, parameters, etc.

This document introduces the K4S280432C CMOS SDRAM product from Samsung Electronics. The product is a synchronous dynamic RAM with a high data rate, organized as 4 x 8,388,608 words by 4 bits, fabricated with Samsung's high-performance CMOS technology. It operates on a 3.3V power supply and is LVTTL compatible with multiplexed address. It supports four banks operation and features programmable burst length, CAS latency, and burst type.

This document describes the features and characteristics of the K4S280432B CMOS SDRAM product, including its organization, operating frequency range, programmable burst length, and latency. The product has high data transfer rate and high performance, making it suitable for various high bandwidth, high performance memory system applications.

This document describes the features and characteristics of the K4S280432B CMOS SDRAM product released by Samsung Electronics in August 1999. The product is a synchronous high data rate dynamic random access memory with a capacity of 128Mbit, fabricated using Samsung's high-performance CMOS technology. It has programmable operating frequencies, burst lengths, and latencies, making it suitable for various high-bandwidth, high-performance memory system applications.

K4S280432A is a 128Mbit SDRAM fabricated with SAMSUNG's high performance CMOS technology. It features synchronous design and programmable characteristics, making it suitable for high bandwidth, high performance memory system applications.

The K4S280432A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance mem- ory system applications.

This document is a product specification manual, which mainly introduces the features and characteristics of the K4S1G0732B product, including the product's organization structure, operating frequency, timing, interface, etc.

This document is the specification of K4S1G0732B