Intersil manuals, page 11
intersil ICL8052/ICL7104/ICL8068/ICL7104 handbook
The ICL7104/ICL7104-16/ICL7104-14 is a 16-bit/14-bit binary three-state latched output plus polarity and overrange integrated A/D converter, ideally suited for interfacing to UARTs and microprocessors. The converter features zero reading guarantee, precise null detection, true ratiometric operation, single reference voltage, on-board clock and reference, auto-zero, auto-polarity, accuracy guaranteed to 1 count, all outputs TTL compatible, ±4V analog input range, and status signal available for external sync, A/Z in preamp, etc.
intersil HUF75823D3 HUF75823D3S handbook
HUF75823D3, HUF75823D3S are Intersil's N-channel ultra-low on-resistance power MOSFETs with 0.150 ohm (VGS = 10V) and provide simulation models for design and use
intersil HUF75645P3 HUF75645S3S handbook
This document describes the features and characteristics of HUF75645P3 and HUF75645S3S UltraFET power MOSFET devices, including ultra-low on-resistance, temperature-compensated PSPICE and SABER electrical models, and thermal impedance models.
intersil HUF75639S3R4851 handbook
The HUF75639S3R4851 is an N-channel power MOSFET from Intersil that is rated for 56A, 115V, and 0.025 Ohms. This device is manufactured using the innovative UltraFET™ process, which achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. It is designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
intersil HUF75637P3 HUF75637S3S handbook
HUF75637P3, HUF75637S3S 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET is a power device launched by Intersil, which has the characteristics of ultra-low on-resistance (rDS(ON) = 0.030 Ω, VGS = 10V) and high temperature stability.
intersil HUF75631SK8 handbook
This document introduces a N-channel ultra-low on-resistance power MOSFET device named HUF75631SK8. It features a simulation model with ultra-low on-resistance and temperature compensation, as well as simulation and thermal impedance models. The device has a peak current of 5.5A and a drain-to-source voltage of 100V.
intersil HUF75631P3 HUF75631S3S handbook
Intersil Corporation provides a data sheet for 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET
intersil HUF75631P3 handbook
This document introduces a product called HUF75631P3, which is a N-channel power MOSFET with ultra-low on-resistance. The product features ultra-low on-resistance and high performance, making it suitable for various applications.
intersil HUF75623P3 handbook
HUF75623P3 is a 22A, 100V, 0.064 Ohm N-channel UltraFET power MOSFET from Intersil Corporation. It features an ultra-low on-resistance and can be used in a variety of power electronic applications.
intersil HUF75545P3 HUF75545S3S handbook
This is the datasheet of Intersil HUF75545P3, HUF75545S3S 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET.
intersil HUF75542P3 HUF75542S3S handbook
HUF75542P3, HUF75542S3S 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs is a low on-resistance N-Channel power MOSFET from Intersil. It features ultra-low switching losses, high current and high voltage capability.
intersil HUF75531SK8 handbook
This document introduces a product named HUF75531SK8, which is a 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET. The product features ultra-low on-resistance, temperature-compensated PSPICE and SABER electrical models, as well as Spice and SABER thermal impedance models. The document also includes packaging symbols, peak current vs pulse width curve, and UIS rating curve of the product.
intersil HUF75344G3 HUF75344P3 HUF75344S3S handbook
intersil HUF75343G3 HUF75343P3 HUF75343S3S handbook
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75343.
intersil HUF75339G3 HUF75339P3 HUF75339S3S handbook
This is a 75A, 55V, 0.012 Ohm, N-channel UltraFET power MOSFET. It is manufactured using an advanced process technology that achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.