Intersil manuals, page 12
intersil HUF75337G3 HUF75337P3 HUF75337S3S handbook
This is a 75A, 55V, 0.014 Ohm N-Channel UltraFET Power MOSFETs manufactured using innovative UltraFET™ process with very low reverse recovery time and stored charge.
intersil HUF75333G3 HUF75333P3 HUF75333S3S handbook
This document describes HUF75333G3, HUF75333P3, and HUF75333S3S, which are 66A, 55V, 0.016 Ohm N-Channel UltraFET Power MOSFETs. These devices are manufactured using the innovative UltraFET™ process, which achieves the lowest possible on-resistance per silicon area and delivers outstanding performance. They can withstand high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. These devices are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
intersil HUF75332G3 HUF75332P3 HUF75332S3S handbook
This is a 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs, manufactured using innovative UltraFET™ process, with very low reverse recovery time and stored charge, suitable for power efficiency-critical applications, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches and power management in portable and battery-operated products.
intersil HUF75329G3 HUF75329P3 HUF75329S3S handbook
HUF75329G3, HUF75329P3, HUF75329S3S 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs are manufactured using the innovative UltraFET™ process by Intersil Corporation. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.
intersil HUF75329D3 HUF75329D3S handbook
This document introduces HUF75329D3 and HUF75329D3S, two 20A, 55V, 0.026 Ohm N-Channel UltraFET power MOSFETs. These devices are manufactured using the innovative UltraFET process, achieving the lowest possible on-resistance per silicon area and delivering outstanding performance. They can withstand high energy in avalanche mode and have very low reverse recovery time and stored charge in the diode. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
intersil HUF75321P3 HUF75321S3S handbook
This document describes the features and characteristics of HUF75321P3 and HUF75321S3S, two N-Channel UltraFET power MOSFET devices. These devices are manufactured using the advanced UltraFET process, which results in the lowest possible on-resistance per silicon area and outstanding performance. They can withstand high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
intersil HUF75321D3 HUF75321D3S handbook
This document describes the HUF75321D3 and HUF75321D3S, which are N-Channel power MOSFETs with a current rating of 20A and a voltage rating of 55V. These MOSFETs are manufactured using the UltraFET™ process, which results in the lowest possible on-resistance per silicon area and excellent performance. They can withstand high energy in avalanche mode and have a diode with low reverse recovery time and stored charge. These devices are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
intersil HUF75309T3ST handbook
The document describes the features and characteristics of the HUF75309T3ST model, which is an N-Channel power MOSFET device. This device is manufactured using the innovative UltraFET process, resulting in low on-resistance, high energy capability, and low reverse recovery time. It is suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
intersil HUF75309P3 HUF75309D3 HUF75309D3S handbook
This document describes the features and characteristics of HUF75309P3, HUF75309D3, and HUF75309D3S, which are N-Channel UltraFET power MOSFET devices. These devices are manufactured using the innovative UltraFET process, which achieves low on-resistance and outstanding performance. They can withstand high energy in avalanche mode, and the diode exhibits low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
intersil HUF75307T3ST handbook
This document describes an N-channel UltraFET power MOSFET, which is manufactured using the innovative UltraFET™ process. The device offers outstanding performance with low on-resistance and low reverse recovery time, making it suitable for applications where power efficiency is important.
intersil HUF75307P3 HUF75307D3 HUF75307D3S handbook
HUF75307P3, HUF75307D3, HUF75307D3S 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75307.
intersil HUF75229P3 handbook
This is a Intersil HUF75229P3 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET, which is manufactured using the innovative UltraFET™ process, which achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.
intersil X9241A Low Power/2-Wire Serial Bus Data Sheet
intersil X5043 X5045 Data Sheet
The X5043, X5045 is a 4K, 512 x 8 Bit CPU Supervisor with 4K SPI EEPROM produced by Intersil. It has functions such as Power-on Reset Control, Watchdog Timer, Supply Voltage Supervision, and Block Lock Protect Serial EEPROM Memory.
intersil HGTP3N60C3D HGT1S3N60C3DS Data Sheet
HGTP3N60C3D and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.