intersil Manuals

HUF76121SK8 is an N-channel power MOSFET manufactured by Intersil using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery- operated products. Formerly developmental type TA76121.

This document describes the features and characteristics of the HUF76121P3 and HUF76121S3S products. These products are N-channel power MOSFETs manufactured using the innovative UltraFET™ process. They have high energy withstand capability in avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

HUF76105DK8 is a low on-resistance (RDS(ON) = 0.050 Ω) N-channel power MOSFET from Intersil Corporation. It has a working voltage of 30V and a maximum current of 5A. This device is suitable for applications that require high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches and power management in portable and battery operated products.

This document introduces HUF76013P3 and HUF76013D3S, two 20A, 20V, 0.022 Ohm N-channel logic level power MOSFETs. These devices are optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance result in lower driver and switching losses, thereby increasing the overall system efficiency.

HUF76009P3, HUF76009D3S 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs is a low gate charge, low input capacitance, high switching speed MOSFET designed for use as the upper switch in synchronous buck applications.

HUF75852G3 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET is a power MOSFET with ultra-low on-resistance. It has a gate-source voltage of 10V and a drain-source voltage of 150V. Its rated current is 75A.

HUF75842P3, HUF75842S3S 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET feature ultra low on-resistance (rDS(ON) = 0.042Ω, VGS = 10V), temperature compensated PSPICE® and SABER™ electrical models, Spice and SABER thermal impedance models, and are available for download.

HUF75831SK8 is a N-channel UltraFET Power MOSFET produced by Intersil Corporation. Its maximum on-resistance is 0.095 ohms, the maximum drain-source voltage is 150V, and the maximum gate-source voltage is 150V.

HUF75829D3, HUF75829D3S 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET is a power transistor produced by Intersil Corporation. It has the characteristics of ultra-low on-resistance, fast response and low conduction resistance. It is suitable for various power electronic applications.

SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor features 600 V VDS, RDS(on) of 0.38 Ω, and ID of 11 A. Its features include: a new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.

This data sheet provides a detailed description of the features and characteristics of the 82C37A CMOS high performance programmable DMA controller. The controller is compatible with the NMOS 8237A and features four independent maskable channels with autoinitial- ization capability. It is also cascadable to any number of channels and supports high speed data transfers of up to 4MBytes/sec with an 8MHz clock and up to 6.25MBytes/sec with a 12.5MHz clock. The controller also supports memory-to-memory transfers and is designed using a static CMOS process that allows for low power operation (ICCSB = 10µA maximum, ICCOP = 2mA/MHz maximum). The controller is fully compatible with TTL and CMOS and internal registers may be read from software.

The ICL7104/ICL7104-16/ICL7104-14 is a 16-bit/14-bit binary three-state latched output plus polarity and overrange integrated A/D converter, ideally suited for interfacing to UARTs and microprocessors. The converter features zero reading guarantee, precise null detection, true ratiometric operation, single reference voltage, on-board clock and reference, auto-zero, auto-polarity, accuracy guaranteed to 1 count, all outputs TTL compatible, ±4V analog input range, and status signal available for external sync, A/Z in preamp, etc.

HUF75823D3, HUF75823D3S are Intersil's N-channel ultra-low on-resistance power MOSFETs with 0.150 ohm (VGS = 10V) and provide simulation models for design and use

This document describes the features and characteristics of HUF75645P3 and HUF75645S3S UltraFET power MOSFET devices, including ultra-low on-resistance, temperature-compensated PSPICE and SABER electrical models, and thermal impedance models.