This is an N-Channel power MOSFET, manufactured using the innovative UltraFET™ process, with the lowest possible on-resistance per silicon area, resulting in outstanding performance. It is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.