intersil Manuals

The HUF75639S3R4851 is an N-channel power MOSFET from Intersil that is rated for 56A, 115V, and 0.025 Ohms. This device is manufactured using the innovative UltraFET™ process, which achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. It is designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

HUF75637P3, HUF75637S3S 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET is a power device launched by Intersil, which has the characteristics of ultra-low on-resistance (rDS(ON) = 0.030 Ω, VGS = 10V) and high temperature stability.

This document introduces a N-channel ultra-low on-resistance power MOSFET device named HUF75631SK8. It features a simulation model with ultra-low on-resistance and temperature compensation, as well as simulation and thermal impedance models. The device has a peak current of 5.5A and a drain-to-source voltage of 100V.

Intersil Corporation provides a data sheet for 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET

This document introduces a product called HUF75631P3, which is a N-channel power MOSFET with ultra-low on-resistance. The product features ultra-low on-resistance and high performance, making it suitable for various applications.

HUF75623P3 is a 22A, 100V, 0.064 Ohm N-channel UltraFET power MOSFET from Intersil Corporation. It features an ultra-low on-resistance and can be used in a variety of power electronic applications.

This is the datasheet of Intersil HUF75545P3, HUF75545S3S 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET.

HUF75542P3, HUF75542S3S 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs is a low on-resistance N-Channel power MOSFET from Intersil. It features ultra-low switching losses, high current and high voltage capability.

This document introduces a product named HUF75531SK8, which is a 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET. The product features ultra-low on-resistance, temperature-compensated PSPICE and SABER electrical models, as well as Spice and SABER thermal impedance models. The document also includes packaging symbols, peak current vs pulse width curve, and UIS rating curve of the product.

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75343.

This is a 75A, 55V, 0.012 Ohm, N-channel UltraFET power MOSFET. It is manufactured using an advanced process technology that achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.

This is a 75A, 55V, 0.014 Ohm N-Channel UltraFET Power MOSFETs manufactured using innovative UltraFET™ process with very low reverse recovery time and stored charge.

This document describes HUF75333G3, HUF75333P3, and HUF75333S3S, which are 66A, 55V, 0.016 Ohm N-Channel UltraFET Power MOSFETs. These devices are manufactured using the innovative UltraFET™ process, which achieves the lowest possible on-resistance per silicon area and delivers outstanding performance. They can withstand high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. These devices are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

This is a 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs, manufactured using innovative UltraFET™ process, with very low reverse recovery time and stored charge, suitable for power efficiency-critical applications, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches and power management in portable and battery-operated products.