Advanced Manuals - Page 8

Advanced manuals, page 8

• ADVANCED POWER TECHNOLOGY APT10026JNR handbook

  Query APT10026JNR suppliers

• ADVANCED POWER TECHNOLOGY APT10026JN handbook

  This document describes the features and parameters of N-Channel Enhancement Mode High Voltage Power MOSFETs. The product model is APT10026JN and the brand is Power MOS IV®. This MOSFET has a drain-source voltage of 1000V, a continuous drain current of 33A, and a drain-source resistance of 0.26Ω.

• ADVANCED POWER TECHNOLOGY APT10026JLL handbook

  The document describes the features and characteristics of a product with model number APT10026JLL, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.

• ADVANCED POWER TECHNOLOGY APT10026JFLL handbook

  This document provides information about APT10026JFLL, including rated voltage, rated current, leakage current, switching speed, etc.

• ADVANCED POWER TECHNOLOGY APT10025PVR handbook

  This is the datasheet of APT10025PVR, a high voltage N-channel enhancement mode power MOSFET. The product features low JFET effect, high junction temperature, small package and low on-resistance.

• ADVANCED POWER TECHNOLOGY APT10025JVR handbook

  The document describes the features and characteristics of a product named APT10025JVR, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc. The product has a drain-source voltage of 1000V and a drain current of 34A.

• ADVANCED POWER TECHNOLOGY APT10025JVFR handbook

  This data table is for the static electrical characteristics of APT10025JVFR

• ADVANCED POWER TECHNOLOGY APT10025JLC handbook

  The document describes a power MOSFET product with high voltage, high current, and low resistance characteristics. It has a breakdown voltage of up to 1000V between drain and source, a maximum on-state drain current of 34A, and an on-state drain-source resistance of 0.25Ω. The product also has low zero gate voltage and drain current, as well as a high gate-source threshold voltage.

• ADVANCED POWER TECHNOLOGY APT10021JLL handbook

  This file is about the technical information of APT10021JLL, including its maximum ratings and static electrical characteristics

• ADVANCED POWER TECHNOLOGY APT10021JFLL handbook

  The document describes a product with the following features and characteristics: 1. Drain-source breakdown voltage; 2. On-state drain current; 3. Drain-source on-state resistance; 4. Zero gate voltage drain current; 5. Gate-source leakage current; 6. Gate threshold voltage.

• ADVANCED POWER TECHNOLOGY APT1001RSVR handbook

  This is a datasheet for the APT1001RSVR Schottky diode. The maximum voltage for this diode is 1000V, the maximum current is 11A, and the maximum resistance is 1.000Ω.

• ADVANCED POWER TECHNOLOGY APT1001RBVR handbook

  APT1001RBVR is a high voltage N-channel enhancement mode power MOSFET from Power MOS V® series. It features low voltage drop and small package.

• ADVANCED POWER TECHNOLOGY APT1001RBN handbook

  This datasheet is for the APT1001RBN. It contains information on the voltage, current, and other parameters of the product, as well as maximum operating temperature.

• ADVANCED POWER TECHNOLOGY APT1001R6BN handbook

  The document describes the features and characteristics of a N-channel enhancement mode power MOSFET product, including its voltage, current, resistance, temperature characteristics, and thermal characteristics.

• ADVANCED POWER TECHNOLOGY APT1001R1SN handbook

  Search for APT1001R1SN suppliers