Advanced Manuals - Page 6

Advanced manuals, page 6

• ADVANCED POWER TECHNOLOGY EUROPE APT10090BLL APT10090SLL 1000V 12A 0.900W handbook

  The document describes the features and characteristics of a product, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, and gate-source leakage current.

• ADVANCED POWER TECHNOLOGY EUROPE APT10090BFLL APT10090SFLL 1000V 12A 0.900W handbook

  The document describes the features and test conditions of a product, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.

• ADVANCED POWER TECHNOLOGY EUROPE APT10088HVR 1000V 11A 0.880 handbook

  APT10088HVR is a N-channel enhancement mode power MOSFET with a 1000V breakdown voltage and a maximum continuous current of 11A. This product uses Power MOS V technology to minimize JFET effect, increase packing density and reduce on-resistance.

• ADVANCED POWER TECHNOLOGY EUROPE APT10086SVR 1000V 13A 0.860 handbook

  Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

• ADVANCED POWER TECHNOLOGY EUROPE APT10086BVR 1000V 13A 0.860 handbook

• ADVANCED POWER TECHNOLOGY EUROPE APT10086BVFR 1000V 13A 0.860 handbook

  APT10086BVFR is a high voltage N-channel enhancement mode power MOSFET produced by ON Semiconductor. It has low voltage drop, fast recovery body diode, 100% avalanche testing and other features.

• ADVANCED POWER TECHNOLOGY EUROPE APT10086BLC APT10086SLC 1000V 13A 0.860 handbook

  This document is the datasheet of APT10086, which introduces the static electrical characteristics, maximum ratings, repetitive non-repetitive surge current, repetitive surge energy and single pulse surge energy of the product.

• ADVANCED POWER TECHNOLOGY EUROPE APT10057WVR 1000V 17.3A 0.570 handbook

  This document describes the features and characteristics of G D S products, including drain-source breakdown voltage, drain-source on-state resistance, and zero gate voltage drain current.

• ADVANCED POWER TECHNOLOGY EUROPE APT10050JVFR 1000V 19A 0.500 handbook

  APT10050JVFR is a Schottky diode from ISOTOP® company, rated at 1000V, maximum current 19A, maximum power 0.500 W, and package type SOT-227.

• ADVANCED POWER TECHNOLOGY EUROPE APT10050JVR 1000V 19A 0.500 handbook

  APT10050JVR is a power device manufactured by ISOTOP company. Its rated voltage is 1000V, continuous current is 19A, and on-state resistance is 0.500 ohms.

• ADVANCED POWER TECHNOLOGY EUROPE APT10050LVR 1000V 21A 0.500 handbook

• ADVANCED POWER TECHNOLOGY EUROPE APT10050JN 1000V 20.5A 0.50 handbook

  APT10050JN is a power MOSFET from ISOTOP company. Its features are a maximum voltage of 1000V, a maximum current of 50A, and a maximum power of 500W.

• ADVANCED POWER TECHNOLOGY EUROPE APT10050JLC 1000V 19A 0.500 handbook

  The document describes the characteristics and test conditions of a specific product, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, gate-source leakage current, and gate threshold voltage.

• ADVANCED POWER TECHNOLOGY EUROPE APT10050B2VR 1000V 21A 0.500 handbook

  APT10050B2VR is a power transistor produced by Texas Instruments. It has a rated voltage of 1000V, a rated current of 21A, a drain-source resistance of 0.500Ω, a rated power of 21W, and a temperature range of -55°C to 150°C.

• ADVANCED POWER TECHNOLOGY EUROPE APT10050B2VFR APT10050LVFR 1000V 21A 0.500W handbook

  APT10050B2VFR and APT10050LVFR are new power MOSFET devices from APT company. The maximum voltage is 1000V, the maximum current is 21A, and the typical resistance is 0.500 ohm.