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FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ is a MOSFET designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. It is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
FDP6670AL/FDB6670AL is a logic level MOSFET that features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. It is optimized for low gate charge, low RDS(ON) and fast switching speed.
This document describes a 30V N-channel power MOSFET designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. It features low RDS(ON) and low gate charge to maximize power conversion efficiency. Additionally, the MOSFET includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
FDP603AL/FDB603AL are Fairchild's N-Channel logic level enhancement mode power field effect transistors with extremely low RDS(ON) and maximum junction temperature of 175°C.
FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor is a low voltage application N-channel logic level enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. Its features are low on-state resistance, fast switching speed, low inline power loss and resistance to transients.
FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrench MOSFET is a N-Channel Logic Level MOSFET launched by Fairchild Semiconductor Corporation. It has 48 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V, RDS(ON) = 14 mΩ @ VGS = 4.5 V, Critical DC electrical parameters specified at elevated temperature, High performance trench technology for extremely low RDS(ON), 175°C maximum junction temperature rating features.
FDB6030L is a N-channel logic level enhancement mode power field effect transistor produced by Fairchild. It features low gate charge (typical 34 nC), low Crss (typical 175 pF) and fast switching speed. This device is particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
FDP6030BL/FDB6030BL is an N-Channel Logic Level PowerTrench MOSFET with a rating of 40A, 30V. It features high performance trench technology for extremely low RDS(ON) and has a maximum junction temperature rating of 175°C.
This document describes the features and characteristics of the FDP6021P/FDB6021P P-Channel power MOSFET, which is suitable for battery management, load switch, and voltage regulator applications.
FDP5645/FDB5645 is a 60V N-Channel PowerTrench® MOSFET that features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
FDP4030L/FDB4030L is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary high cell density DMOS technology. It has extremely low RDS(ON) and superior switching performance. This device is particularly suited for low voltage applications such as DC/DC converters, motor drivers and battery chargers.
