Fairchild Manuals

This document describes the features and characteristics of the FDP46N30 300V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 46A current output, low gate charge, and fast switching speed.

FDP51N25 250V N-Channel MOSFET is a 51A, 250V, RDS(on) = 0.060 Ω @VGS = 10 V, low gate charge (typical 55 nC), low Crss (typical 63 pF), fast switching, 100% avalanche tested, improved dv/dt capability N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation.

FDP55N06/FDPF55N06 60V N-Channel MOSFET is a low gate charge, low Crss, fast switching power field effect transistor produced by Fairchild Semiconductor Corporation.

FDP4020P/FDB4020P is a P-channel low threshold MOSFET from Fairchild Semiconductor Corporation. It has a maximum rated drain current of -16A and drain-source voltage of -20V. The RDS(on) can be as low as 0.08 ohm. This device can be used as a low voltage output linear switch or a P-channel switch for DC-DC converters.

FDP39N20 is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This device uses Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, fast switching, 100% avalanche testing, and is well suited for high efficiency switched mode power supplies and active power factor correction applications.

The FDB3682 / FDP3682 is a N-Channel PowerTrench® MOSFET with 100V, 32A, 36mΩ features.

This document is about the FDB3652/FDP3652/FDI3652 N-Channel PowerTrench® MOSFET product information manual released by Fairchild Semiconductor Corporation in 2002

This document describes the features and characteristics of FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET, including low on-resistance, low Miller charge, low QRR body diode, etc. It is suitable for applications such as DC/DC converters, offline UPS, distributed power architectures and VRMs, primary switches for 24V and 48V systems, high voltage synchronous rectifiers, direct injection/diesel injection systems, 42V automotive load control, and electronic valve train systems.

This document describes the FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET. It is specifically designed for switching on the primary side in isolated DC/DC converter applications. The MOSFET features low on-resistance, fast switching speed, and high power and current handling capability. It offers improved efficiency and easier/safer driving at high frequencies.

This is a datasheet for Fairchild Semiconductor Corporation FDP2570/FDB2570, a 150V N-Channel PowerTrench MOSFET. It is specifically designed for switching on the primary side in isolated DC/DC converter applications. This MOSFET features low on-resistance and fast switching, making it suitable for applications requiring a 150V MOSFET with low on-resistance and fast switching. It has faster switching and lower gate charge compared to other MOSFETs with similar on-resistance specifications, resulting in easier and safer driving (even at high frequencies) and higher overall efficiency in DC/DC power supply designs.

FDB2532 / FDP2532 / FDI2532 is a N-Channel PowerTrench® MOSFET from Fairchild Semiconductor with 150V, 79A, 16mΩ features, applicable to DC/DC converters and Off-Line UPS, distributed power architectures and VRMs, primary switch for 24V and 48V systems, high voltage synchronous rectifier, direct injection / diesel injection systems, 42V automotive load control and electronic valve train systems.