This page provides manuals, user guides, handbooks, instructions, specification, instruction, maintenance manual for Fairchild Automation control Equipment, Electronic Original, ...
This document describes the features and characteristics of the FQPF70N08 80V N-Channel MOSFET. These transistors are produced using Fairchild's proprietary DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses. They are suitable for low voltage applications such as automotive, high efficiency DC/DC converters, and DC motor control.
FQPF70N10 is a N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor using its proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse withstand capability. It is suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
FQPF70N10 is a 100V N-channel MOSFET manufactured by Fairchild Semiconductor. This device has low on-state resistance, low gate charge, fast switching, 100% avalanche tested, improved dv/dt capability, and is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
FQPF7N10 is a 100V N-Channel MOSFET produced by Fairchild. It has low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.
FQPF7N10L is a N-channel enhancement mode power field effect transistor produced by Fairchild, using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse endurance in avalanche and commutation modes. It is suitable for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
FQPF7N10L is a N-channel enhancement mode power field effect transistor produced by Fairchild, using planar stripe DMOS technology, which has the characteristics of low on-state resistance, high switching speed and high surge energy. It is suitable for low voltage applications such as high efficiency DC/DC converters and DC motor control.
This document is the technical information of QFET. It introduces the basic concepts, structure, working principle, applications, and brands and models of QFET.
FQPF7N20L is a 200V N-Channel MOSFET produced by Fairchild. It features low gate charge and low on-state resistance, making it suitable for high efficiency switching DC/DC converters, switch mode power supplies and motor control applications.
QFET QFET QFET QFET is an integrated circuit brand owned by Dinghao Electronics. QFET QFET QFET QFET products cover MOSFET, IGBT, SiC MOSFET, SiC JFET, SiC JBS, SiC PIN, GaN HEMT and other products, widely used in electric vehicles, new energy, rail transit, industrial control, 5G communications, photovoltaics and other fields.
The FQPF7N60 is a 600V N-channel MOSFET produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology and has the features of low on-state resistance, fast switching, 100% avalanche testing, etc.
FQPF7N60 is a 600V N-Channel MOSFET from Fairchild Semiconductor with a maximum continuous current of 4.3A, 1.0 ohm typical on-state resistance, 29 nC typical gate charge, 16 pF typical gate capacitance, 100% avalanche tested and improved dv/dt capability.
FQP7N65C/FQPF7N65C is a 650V N-channel MOSFET manufactured by Fairchild. It features low gate charge, low drain-source capacitance, fast switching, 100% avalanche tested and improved dv/dt capability. This device is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
This document describes the features of the FQP7N65C/FQPF7N65C 650V N-Channel MOSFET. It is produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in avalanche and commutation mode. These devices are suitable for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
