Fairchild Manuals

QFET QFET QFET QFET is an inventory component of Dinghao Electronics, which provides technical data, encyclopedia information, and hot news

This file is an introduction to QFET, which introduces the characteristics and features of QFET

FQPF6N60 is a 600V N-channel MOSFET with features such as low RDS(on), low gate charge and low Crss, which is suitable for high efficiency switch mode power supplies

FQPF6N60 is a 600V N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It offers low on-state resistance, superior switching performance and high energy pulse capability. It is well suited for high efficiency switch mode power supplies.

FQP6N60C/FQPF6N60C 600V N-Channel MOSFET is a high efficiency power field effect transistor produced by Fairchild Semiconductor Corporation. It features 5.5A of maximum continuous current, 600V of maximum drain-source voltage, 2.0Ω of typical on-state resistance, 16 nC of typical gate charge, and 7 pF of typical reverse output capacitance. This device is suitable for applications such as high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.

This 700V N-channel MOSFET is produced by Fairchild using its proprietary planar stripe DMOS technology. It offers superior switching performance and resistance to high energy pulses, making it well-suited for high efficiency switch mode power supplies.

FQPF6N70 is a 700V N-channel MOSFET produced by Fairchild. It features a low gate charge (typical 30 nC), low Crss (typical 15 pF), fast switching, 100% avalanche tested, and improved dv/dt capability.

FQPF6N80 is an 800V N-channel MOSFET produced by Fairchild Semiconductor. It has a continuous current of 3.3A and a maximum voltage of 800V. Its features are low on-state resistance, low gate charge and low Coss. The device has been tested 100% for avalanche and is suitable for high efficiency switch mode power supplies.

FQPF7P06 is a 60V P-Channel MOSFET produced by Fairchild. It has low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and other features.

The FQP6N80C/FQPF6N80C 800V N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor Corporation. It has low on-state resistance, high switching performance, and can withstand high energy pulses.

FQPF6N90 is a 900V N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is well suited for high efficiency switch mode power supply.

This document describes the features of the FQPF6N90 N-Channel enhancement mode power field effect transistor, including minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQP6N90C/FQPF6N90C is a high-performance N-channel enhancement mode power field effect transistor produced by Fairchild. This device uses Fairchild's proprietary planar stripe DMOS technology and has low on-state resistance, fast switching and 100% avalanche testing, making it suitable for high efficiency switch mode power supplies.

This document describes the features and characteristics of the FQPF6P25 250V P-Channel MOSFET produced by Fairchild Semiconductor International. These power field effect transistors are made using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses. They are suitable for high efficiency switching DC/DC converters.

FQPF70N08 is an N-channel enhancement mode power field-effect transistor manufactured by Fairchild using Fairchild's proprietary planar stripe DMOS technology, featuring low on-state resistance, superior switching performance and high-energy pulse endurance, suitable for automotive and other low-voltage applications.