Fairchild Manuals

The FAN7392 is a high-current, high- and low-side gate drive IC produced by Fairchild Semiconductor Corporation. It can drive high-voltage MOSFETs and IGBTs with a maximum operating voltage of 600V.

FAN73932 is a half-bridge gate-drive IC produced by Fairchild company. It is suitable for driving high-voltage MOSFETs and IGBTs with a maximum operating voltage of up to +600V.

The FAN73933 is a half-bridge, gate-drive IC with programmable dead-time control functions that can drive high-speed MOSFETs and IGBTs operating up to +600V.

FAN7393A is a half-bridge gate-drive IC with shut- down and programmable dead-time control functions that can drive high-speed MOSFETs and Isolated Gate Bridge Transistors (IGBTs) operating up to +600V. It has a buffered output stage with all NMOS transistors designed for high-pulse-current driving capability and minimum cross-conduction. Fairchild’s high-voltage process and common-mode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-

The FAN7842 is a monolithic high and low side gate driver IC that can drive MOSFETs and IGBTs operating up to +200V. It features floating channels, sourcing/sinking current driving capability of typically 350mA/650mA, common-mode dv/dt noise canceling circuit, extended allowable negative VS swing, UVLO functions, and TTL-compatible input logic threshold levels. It is suitable for applications such as half- and full-bridge converters, current-fed push-pull converters, and synchronous buck converters.

This application note describes the selection of bootstrap components, including bootstrap capacitors, bootstrap diodes, bootstrap resistors, bootstrap transformers, and bootstrap transistors.

The FAN7888 is a monolithic three half-bridge gate-drive IC designed for high-voltage, high-speed driving MOS-FETs and IGBTs operating up to +200V.

The FAN73892 is a monolithic three-phase half-bridge gate-drive IC designed for high-voltage, high-speed, driving MOSFETs and IGBTs operating up to +600V. It features a floating channel for bootstrap operation, typically providing sourcing/sinking currents of 350mA/650mA. All channels have extended allowable negative VS swing to -9.8V for signal propagation at VDD=VBS=15V and are out of phase with input signals. The IC also includes matched propagation delay for all channels, is 3.3V and 5V input logic compatible, and has adjustable fault-clear timing. It is equipped with built-in advanced input filter, shoot-through prevention logic, soft turn-off function, and common-mode dv/dt noise-canceling circuit. The product has built-in UVLO functions for all channels and is suitable for applications such as 3-phase motor inverter driver, air conditioner, washing machine, refrigerator, dishwasher, industrial inverter, sewing machine, and power tools.

FAN7389 is a 600V high-voltage, high-speed driving MOSFET and IGBT three-phase half-bridge gate-drive IC with advanced input filter, anti-short circuit logic, soft turn-off function and other protection functions.

FAN7388 is a monolithic three half-bridge gate-drive IC designed for high-voltage, high-speed driving MOS-FETs and IGBTs operating up to +600V.

This document describes the Latch-Up phenomenon in CMOS logic, including the causes, consequences, and how to prevent Latch-Up

This document introduces Fairchild Semiconductor Corporation's low-side MOSFET gate driver, including application scenarios, driver design, MOSFET driver datasheet current ratings and other contents

L2FET is a 5V gate-driven power MOSFET that is compatible with a 5V power supply for use in logic circuitry. L2FETs retain the on resistance, drain current, and blocking voltage ratings of their 10V predecessors, but operate from a much less costly 5V supply. The reduction in gate drive voltage is the result of halving the thickness of the gate insulator from the industry standard 100nm to 50nm (500Å). Since the surface inversion of the MOS channel is determined by the gate insulator voltage field, halving the insulator thickness halves the required gate voltage to achieve the same surface inversion, thereby not compromising drain characteristics.

The FAN3100 is a single-channel 2A high-speed low-side gate driver with 3A peak sink/source current at VDD = 12V and a 4.5 to 18V operating range. It features dual-logic inputs that can be configured as non-inverting or inverting with an enable function. The driver has internal resistors that turn it off if there are no inputs. It has a typical rise time of 13ns and a typical fall-time of 9ns with a 1nF load. It offers a choice of TTL or CMOS input thresholds and utilizes MillerDrive™ technology for a propagation delay time under 20ns with input falling or rising. The driver is available in a 6-lead 2x2mm MLP or 5-pin SOT23 package and is rated from -40°C to 125°C ambient. It is suitable for switch-mode power supplies, high-efficiency MOSFET switching, synchronous rectifier circuits, and DC-to-DC converters.

The FAN3111 1A gate driver is designed to drive an N-channel enhancement-mode MOSFET in low-side switching applications. It features a 1.4A peak current and 15ns delay time. It is suitable for switch-mode power supplies, synchronous rectifier circuits, pulse transformer drivers, logic to power buffers and motor control applications.