Fairchild Manuals

This document describes the features and characteristics of an N-Channel PowerTrench® MOSFET product manufactured by Fairchild Semiconductor Corporation, including its low on-resistance, low Miller charge, low QRR body diode, and UIS capability. The product is suitable for applications in the automotive industry such as motor/body load control, ABS systems, powertrain management, injection systems, as well as DC-DC converters and offline UPS.

This document describes the features and characteristics of the FDP16AN08A0 / FDB16AN08A0 N-Channel PowerTrench® MOSFET products introduced by Fairchild Semiconductor Corporation in 2002. The product features low on-resistance, low Miller charge, low Qrr body diode, UIS capability, etc. It is suitable for applications such as 42V automotive load control, starter/alternator systems, electronic power steering systems, electronic valve train systems, DC-DC converters and off-line UPS, distributed power architectures and VRMs, and primary switch for 24V and 48V systems.

This document describes the features and characteristics of the FDB14AN06LA0 / FDP14AN06LA0 N-Channel PowerTrench® MOSFET products manufactured by Fairchild Semiconductor Corporation. This MOSFET has a voltage rating of 60V, a current rating of 60A, and an on-resistance of 14.6mΩ. It also features low Miller charge, low QRR body diode, UIS capability (single pulse and repetitive pulse), and more. The product is suitable for applications such as motor/body load control, ABS systems, powertrain management, injection systems, DC-DC converters and off-line UPS, distributed power architectures and VRMs, and primary switch for 12V and 24V systems.

FDB13AN06A0 / FDP13AN06A0 is a N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. Its features are rDS(ON) = 11.5mΩ (Typ.), Qg(tot) = 22nC (Typ.), Low Miller Charge, Low QRR Body Diode, UIS Capability (Single Pulse and Repetitive Pulse), Qualified to AEC Q101.

FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench® MOSFET 150V, 14A, 120mΩ is a low Miller Charge, low Qrr Body Diode, UIS Capability (Single Pulse and Repetitive Pulse) MOSFET.

The FDB10AN06A0 / FDP10AN06A0 N-Channel PowerTrench® MOSFET 60V, 75A, 10.5mΩ is a MOSFET produced by Fairchild Semiconductor Corporation. It features low Miller Charge, low Qrr Body Diode, UIS Capability (Single Pulse and Repetitive Pulse).

FDB070AN06A0 / FDP070AN06A0 is an N-channel MOSFET produced by Fairchild Semiconductor. Its features are low RDS(ON), low Qg(tot), low Miller Charge, low QRR Body Diode, UIS Capability (Single Pulse and Repetitive Pulse), and it complies with the AEC Q101 standard. It is suitable for automotive industry applications such as Motor / Body Load Control, ABS Systems, Powertrain Management, Injection Systems, DC-DC converters and Off-line UPS, Distributed Power Architectures and VRMs, Primary Switch for 12V and 24V systems.

This document describes the features and characteristics of FDB060AN08A0 / FDP060AN08A0 N-Channel PowerTrench® MOSFET, including its low rDS(ON), low Miller charge, low QRR body diode, UIS capability, etc. The product is suitable for applications such as 42V automotive load control, starter/alternator systems, electronic power steering systems, electronic valve train systems, DC-DC converters and off-line UPS, distributed power architectures and VRMs, and primary switch for 24V and 48V systems.

FDB050AN06A0 / FDP050AN06A0 is a N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ product produced by Fairchild Semiconductor Corporation. It has the features of rDS(ON) = 4.3mΩ (Typ.), VGS = 10V, ID = 80A, and is suitable for Motor / Body Load Control applications.

The FDP047AN08A0 is a MOSFET manufactured by Fairchild Semiconductor Corporation. Its features are low Miller Charge, low Qrr Body Diode, UIS Capability (Single Pulse and Repetitive Pulse). It is applied to 42V Automotive Load Control, Starter / Alternator Systems, Electronic Power Steering Systems, Electronic Valve Train Systems, DC-DC converters and Off-line UPS, Distributed Power Architectures and VRMs, Primary Switch for 24V and 48V systems.

This document describes the features and characteristics of the N-Channel PowerTrench® MOSFET products, models FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0, including maximum voltage and current, low Miller charge, low QRR body diode, and UIS capability.

FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ is a low-power power transistor with 3.5mΩ (typical) on-resistance, 95nC (typical) gate charge, low Miller charge and low QRR body diode. The device meets AEC Q101 standard and is suitable for automotive, industrial, and consumer electronics applications.

The USB1T20 is a generic USB 2.0 compliant transceiver. Using a single voltage supply, the USB1T20 provides an ideal USB interface solution for any electronic device able to supply 3.0V to 3.6V. It is designed to allow 5.0V or 3.3V programmable and standard logic to interface with the physical layer of the Universal Serial Bus. It is capable of transmitting and receiving serial data at both full speed (12Mbit/s) and low speed (1.5Mbit/s) data rates. Packaged in industry standard TSSOP and Fairchild’s ultra-small 2.5mm x 2.5mm MLP package, the USB1T20 is ideal for ultra-portable electronics and other space con- strained applications.

The USB1T11A is a USB transceiver from Fairchild Semiconductor that supports 12Mbit/s and 1.5Mbit/s data rates and supports single-ended data interface. Its power supply voltage is 3.3V.

The USB1T1105A is a USB peripheral transceiver that complies with USB Specification Rev 2.0. It has an integrated 5V to 3.3V voltage regulator that can be powered directly from the USB host (VBUS). It supports full speed 12Mbit/s data rates and is ideal for portable electronic devices.