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This document introduces the inventory, technical information, encyclopedia information, and hot news of Dinghao company. The document mentions QFET products and describes their features and characteristics.
This document describes the features and characteristics of the FQAF33N10 100V N-Channel MOSFET produced by Fairchild Semiconductor International. These MOSFETs are made using advanced DMOS technology and have low on-state resistance, superior switching performance, and high energy pulse withstand capability. They are suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
This product is a logic N-channel MOSFET with a rated voltage of 100V and a maximum current of 25.8A. Its features are fast switching speed, low on-state resistance, and high pulse energy withstand ability. This product is suitable for applications such as high efficiency switching DC/DC converters and DC motor control.
This document describes the features and characteristics of the FQAF33N10L N-Channel MOSFET produced by Fairchild Semiconductor International. These MOSFETs are manufactured using Fairchild's proprietary planar stripe DMOS technology, which offers low on-state resistance, superior switching performance, and high energy pulse endurance. They are suitable for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
The document covers topics such as stock inventory, technical information, encyclopedia information, and hot news. It mainly focuses on the features and characteristics of QFET products.
This document describes the features and characteristics of FQP5N60C/FQPF5N60C 600V N-Channel MOSFET, including low on-state resistance, fast switching, and low gate charge.
FQPF5N80 is an N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance, and the ability to withstand high energy pulses in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
FQPF5N80 800V N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor International. It uses Fairchild's proprietary planar stripe DMOS technology, which has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
FQPF5N90 is a 900V N-channel power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse tolerance. It is suitable for high efficiency switch mode power supply.
FQPF5N90 is a N-Channel MOSFET produced by Fairchild with the characteristics of low on-state resistance, low gate capacitance, fast switching, 100% avalanche testing and improved dv/dt capability.
FQPF5P10 is a 100V P-channel MOSFET produced by Fairchild. Its features are low on-state resistance, superior switching performance, and the ability to withstand high energy pulses in the avalanche and commutation mode. It is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters and DC motor control.
The FQPF5P10 is a 100V P-channel MOSFET produced by Fairchild. It features low gate charge, low reverse leakage current and fast switching characteristics, and is suitable for low-voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.
