Features -PNP silicon epitaxial planar transistor for switching and amplifier application. -As complementary type, the NPN transistor 2N3904-G is recommended. -This transistor is available in the SOT-23 case with the type designation MMBT3906-G.
This document is a technical datasheet for the Comchip 2N3906-G, a general-purpose PNP silicon epitaxial planar transistor. It is designed for switching and amplifier applications and is available in both TO-92 and SOT-23 (MMBT3906-G) packages.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as collector-emitter voltage (-40V), continuous collector current (-0.2A), and power dissipation (+150mW). It also details DC current gain ranges classified by rank (O, Y, G) and includes characteristic curves for parameters like Vce-Ic and hFE-Ic.
| Transistor Type | PNP silicon epitaxial planar transistor |
|---|---|
| Power Dissipation (WPCCollector) | +150 mW |
| Storage Temperature (CTSTG) | -55 °C to +150 °C |
| DC Current Gain (hFE) Range O | 100-200 |
The NPN transistor 2N3904-G is recommended as the complementary type.
The device is available in TO-92 and SOT-23 cases (designated MMBT3906-G).