Features -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes
This datasheet covers the Comchip 1N5221B-G through 1N5267B-G series of glass silicon Zener diodes. Key features include planar die construction, 500mW power dissipation, and suitability for automated assembly processes. The devices are RoHS compliant and come in a DO-35 molded plastic case.
| Power Dissipation | 500mW |
|---|---|
| Junction Temperature | 175 °C |
| Storage Temperature Range | -65 ~ +175 °C |
| Thermal Resistance (Junction to Ambient) | 0.3 °C/W |
| Forward Voltage | 1.1 V |
| Case Style | DO-35 |
| Marking Code | 1N50XXB |
The diodes have a maximum power dissipation of 500 mW.
The maximum junction temperature is 175 °C.
The storage temperature range starts at -65 °C.