Fairchild Manuals (Industrial)

This document details the characteristics of the IRLS640A MOSFET, including absolute maximum ratings, thermal resistance, electrical characteristics, etc.

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MTD3055V is an N-channel enhancement mode field effect transistor from MTD company, with a maximum drain current of 300mA, a maximum gate-drain voltage of 20V, and a maximum operating temperature of 125℃.

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This report provides an overview of the German Industry 4.0 framework and Germany's progress in implementing the framework. The German Industry 4.0 framework was published by the German Federal Ministry for Economic Affairs and Energy (BMWi) in December 2011. The framework consists of five main elements: digital infrastructure, connected factories, connected products, connected services, and connected value chains. The goal of the German Industry 4.0 framework is to achieve more intelligent and efficient manufacturing by connecting people, machines, and data.

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MTP3055VL is a logic level N-channel MOSFET that is specifically designed for low voltage, high speed switching applications such as power supplies and power motor controls. It features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

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NDP5060L/NDB5060L is a logic level N-Channel enhancement mode power field effect transistor produced by Fairchild using high cell density DMOS technology. It has extremely low Rdson, fast switching speed and the ability to withstand high energy pulses. It is suitable for low voltage applications.

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These devices are particularly suited for low voltage applications such as automotive, industrial, communication, and computer applications.

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This product is a P-channel logic level enhancement mode power field effect transistor with a rated current and voltage of -30 A and -30 V, extremely low RDS(ON) and a maximum junction temperature rating of 175°C.

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This document is the user manual of NDP6060L/NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor.

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The BC369 is a PNP General Purpose Amplifier from Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 20V, maximum collector-base voltage is 25V, maximum emitter-base voltage is 5.0V, and maximum collector current is 1.5A. Its operating temperature range is -55 to +150℃.

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This document introduces the dual P-Channel Enhancement Mode Power Field Effect Transistors produced by Fairchild Semiconductor Corporation. The product is produced using Fairchild's proprietary Trench Technology, which has a very high density and is designed to minimize on-state resistance, provide rugged and reliable performance, and fast switching speed. This product is particularly suitable for low voltage applications requiring a low current high side switch.

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This document introduces the features and characteristics of NDP6060/NDB6060.

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This document introduces the absolute maximum ratings, product features, technical specifications of NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor.

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NDS0605 is a Fairchild P-channel enhancement mode field effect transistor with low RDS(ON), high density, and high saturation current, which is suitable for low voltage low current applications.

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NDS0610 P-Channel Enhancement Mode Field Effect Transistor is a voltage controlled small signal switch with low RON(on) and high saturation current.

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The NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor is a high density, DMOS technology product produced by Fairchild. This device has a very low RDS(ON) and is suitable for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching and low in-line power loss are needed in a very compact area.

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The NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor is a low voltage application field effect transistor produced by Fairchild. The product has extremely low on-state resistance and is suitable for notebook computer power management, portable products and consumer electronics applications.

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NDS351AN is a Fairchild Semiconductor N-Channel Logic Level MOSFET that is produced using PowerTrench technology, and has ultra-low on-resistance, ultra-low gate charge and ultra-small package.

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The NDS351N is Fairchild's N-Channel logic level enhancement mode power field effect transistor, using copper lead frame's proprietary package design, with superior thermal and electrical performance. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package.

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