NXP Manuals (Industrial)

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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Logic level N-channel MOSFET in TO-220 package qualified to 175

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Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.

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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP

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The NXP Semiconductors SA56004X is an SMBus compatible, 11-bit remote/local digital temperature sensor with overtemperature alarms. The remote channel of the SA56004X monitors a diode junction, such as a substrate PNP of a microprocessor or a diode connected transistor such as the 2N3904 (NPN) or 2N3906 (PNP). With factory trimming, remote sensor accuracy of 1 C is achieved.

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Logic level N-channel MOSFET in D2PAK package qualified to 175

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This software installation guide shows you how to correctly load communications firmware on the Fm+ Demo Board OM13320 and the GUI software that runs under Win7 64-bit operating system. Please ignore any previous versions of software or firmware which may mention FM+DevelopmentBoard V03_00.bin, size 19kb,orFmDevelopmentBoardOM13260SoftwareInstall.zip, size 118MB. Also, there is no need to install the correct USB driver.

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Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP

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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.

File format: PDF Size:227 KB

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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New standards and proprietary approaches are enabling the next generation of Powerover- Ethernet (PoE) systems capable of delivering up to 100W to each powered device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan-tilt-zoom CCTV cameras, for example, are placing increased demands on the power sourcing equipment (PSE) in terms of

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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

File format: PDF Size:268 KB

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

File format: PDF Size:265 KB

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package.

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The LPC15xx are ARM Cortex-M3 based microcontrollers for embedded applications featuring a rich peripheral set with very low power consumption. The ARM Cortex-M3 is a next generation core that offers system enhancements such as enhanced debug features and a higher level of support block integration.

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Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small DFN1608D-2 (SOD1608) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

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Standard level N-channel MOSFET in I2PAK package qualified to 175

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