Fairchild Manuals (Industrial)

FQT13N06 60V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This device uses Fairchild's proprietary planar stripe DMOS technology, which has low on-state resistance, superior switching performance and high energy pulse endurance, making it ideal for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products.

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FQT13N06L is a 60V logic N-channel MOSFET produced by Fairchild. It has low gate charge, low reverse capacitance, high switching speed, and improved dv/dt capability.

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This datasheet provides the characteristics and parameters of FQT1N60C N-Channel MOSFET. The product is manufactured by Fairchild and is a 600V, 0.2A N-channel enhancement mode power field-effect transistor. The product has a low on-state resistance of 9.3 ohms, 4.8nC of low gate charge and 3.5pF of low Crss. It also has fast switching, 100% avalanche testing and improved dv/dt capability. The product is RoHS compliant and is suitable for high efficient switched mode power supplies and active power factor correction.

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FQT1N80TF_WS is an N-channel enhancement mode power field effect transistor produced by Fairchild. This product uses Fairchild's proprietary planar stripe DMOS technology and has low on-state resistance, superior switching performance, high energy pulse bearing capability and improved dv/dt capability. It is suitable for high efficient switched mode power supplies and active power factor correction.

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This document describes the FQT3P20 QFET TM FQT3P20 200V P-Channel MOSFET from Fairchild Semiconductor Corporation. These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

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FQT4N20L is a 200V N-Channel MOSFET produced by Fairchild. Its features are low on-state resistance, fast switching, high dv/dt, 100% avalanche testing, and low-voltage drive.

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FQT5P10 100V P-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor Corporation. It features low on-state resistance, superior switching performance and high energy pulse withstand capability. It is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.

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The FQT7N10 100V N-Channel MOSFET is a power field effect transistor produced by Fairchild. It has low gate charge, low drain-source capacitance, fast switching, and improved dv/dt capability.

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FQT7N10L is a 100V LOGIC N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It has features such as 1.7A, 100V, RDS(on) = 0.35Ω @VGS = 10 V, low gate charge (typical 4.6 nC), low Crss (typical 12 pF).

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This document describes the features and characteristics of the QFET TM FQD20N06L / FQU20N06L products released in March 2009. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary planar stripe DMOS technology. This technology has been specially designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

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BC307/308/309 are PNP type silicon transistors manufactured by Fairchild Semiconductor Corporation. The transistor has a collector-emitter voltage of -50 to -30 V, a collector-emitter breakdown voltage of -45 to -25 V, an emitter-base voltage of -5 V, a collector current of -100 mA and a collector power dissipation of 500 mW. The transistor is typically used in switching and amplifier applications.

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FQP11N50CF/FQPF11N50CF is a 500V N-Channel MOSFET with a maximum current of 11A and an on-resistance of 0.55 ohms. The device is manufactured using Fairchild's proprietary planar stripe DMOS technology and features low on-resistance, low gate charge, low Crss, fast switching, fast recovery body diode and 100% avalanche testing. It is suitable for high efficiency switched mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.

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This document describes the features and characteristics of FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET, including 10A current, 500V voltage, low gate charge and low Crss, fast switching, improved dv/dt capability.

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This document describes the FQP9P25 P-Channel MOSFET product. The product is produced using Fairchild's proprietary technology, with features of low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for high efficiency switching DC/DC converters.

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This document describes the features and characteristics of the FQP9N90C/FQPF9N90C 900V N-Channel MOSFET produced by Fairchild Semiconductor Corporation. These power field effect transistors utilize Fairchild's proprietary planar stripe DMOS technology to achieve low on-state resistance, superior switching performance, and high energy pulse withstand capabilities in avalanche and commutation modes. These devices are well-suited for high efficiency switched mode power supplies.

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FQP9N30 is a 300V N-channel MOSFET with a maximum current of 9.0A, fast switching speed, high voltage pulse resistance, suitable for high efficiency switching DC/DC converters, switch mode power supply.

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The FQP8P10 is a 100V P-channel MOSFET from Fairchild with low on-state resistance, low gate charge and fast switching characteristics. It is suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converter and DC motor control

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This is the PDF datasheet of FQP8N90C/FQPF8N90C 900V N-Channel MOSFET

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This document describes the features and characteristics of the FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET, including low on-state resistance, fast switching speed, and high energy pulse withstand capability.

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