Fairchild Manuals (Industrial)

NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Features

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This document describes the absolute maximum ratings and electrical characteristics of BC337/338 NPN epitaxial silicon transistors. The transistors are suitable for AF driver stages and low power output stages, and are complementary to BC327/BC328.

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FQPF11P06 is a 60V P-channel MOSFET from Fairchild, which features low gate charge, low Crss, fast switching, high dv/dt capability, etc.

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FQP15P12/FQPF15P12 is a P-channel MOSFET with a 120V voltage rating produced by Fairchild. It has low on-state resistance, high switching speed, and high energy pulse resistance. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters and DC motor control.

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This document is a product manual, which introduces the characteristics of QFET products.

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The FQPF19N10 is a 100V N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, high switching performance, and the ability to withstand high-energy pulses in avalanche and commutation mode. It is suitable for low-voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.

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FQPF20N06 is a 60V N-Channel MOSFET produced using Fairchild's DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse withstand capability. It is suitable for low voltage applications such as automotive, DC/DC converters and high efficiency switching for power management in portable and battery operated products.

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FQPF20N06L is a 60V Logic N-Channel MOSFET. It features 15.7A maximum current, 0.055Ω RDS(on) and low gate charge and is well suited for low voltage applications.

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This manual introduces the functions and usage of QFET.

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FQPF22P10 is a 100V P-Channel MOSFET manufactured by Fairchild with low on-state resistance, superior switching performance, high energy pulse withstand capability, low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.

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This white paper is published by QFET company, introducing the features and characteristics of QFET products.

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The FQPF27P06 is a 60V P-channel MOSFET that features low gate charge, low Crss, and fast switching. It is well-suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

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This document describes the features and characteristics of the FQPF2N70 QFET TM FQPF2N70 700V N-Channel MOSFET, including low on-state resistance, superior switching performance, and ability to withstand high energy pulse in the avalanche and commutation mode. Suitable for high efficiency switch mode power supply.

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FQPF2N80 is a 800V N-channel MOSFET produced by Fairchild. Its features are: 1.5A, 800V, RDS(on) = 6.3Ω @VGS = 10 V, low gate charge (typical 12 nC), low Crss (typical 5.5 pF), fast switching, 100% avalanche tested, improved dv/dt capability.

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FQPF30N06L is a 60V logic N-channel MOSFET produced by Fairchild Semiconductor Corporation. Its features include low on-state resistance, superior switching performance, high energy pulse endurance and low gate charge and Crss. This device is well suited for low voltage applications such as automotive, DC/DC converters and high efficiency switching for power management in portable and battery operated products.

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