Fairchild Manuals (Industrial)

75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs

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HUF75345G3, HUF75345P3, HUF75345S3S 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs are manufactured by Fairchild Semiconductor Corporation. This device has high performance, low reverse recovery time and stored charge, and is suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

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This document describes the features and characteristics of Fairchild Semiconductor Corporation's HUF75542P3 and HUF75542S3S products, including ultra-low on-resistance, simulation models, peak current vs pulse width curve, etc.

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This file is the datasheet of HUF75545P3, HUF75545S3, HUF75545S3S, introducing the features and characteristics of the products. For details, please refer to the original file.

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HUF75631P3, HUF75631S3ST 33A, 100V, 0.040 Ohm, N-Channel, UltraFET® Power MOSFETs is a ultra low on-resistance power MOSFET from Fairchild Semiconductor Corporation.

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The HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 are N-channel UltraFET power MOSFETs manufactured by Fairchild Semiconductor. They have very low on-resistance, high switching speed, high current density, and high reliability. They are suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

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HUF75652G3 is a N-channel MOSFET produced by Fairchild Semiconductor Corporation. Its characteristic is low on-resistance, maximum voltage is 100V, and maximum current is 75A.

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The HUF75842P3 and HUF75842S3S are 43A, 150V, 0.042 Ohm N-channel ultra low on-resistance Fairchild UltraFET power MOSFETs.

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The HUF75852G3 is a N-Channel, UltraFET® Power MOSFET from Fairchild Semiconductor Corporation. It features ultra-low on-resistance (rDS(ON) = 0.016Ω, VGS = 10V), and provides simulation models, reliability information and more.

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This document describes the features and characteristics of HUF76407D3 and HUF76407D3S, N-channel logic level UltraFET® power MOSFET products, including ultra-low on-resistance, temperature compensated PSPICE and SABER electrical models, Spice and SABER thermal impedance models, etc.

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This product is a N-channel logic level ultra-low resistance power MOSFET with ultra low gate resistance (rDS(ON) = 0.030 Ω, VGS = 10V, rDS(ON) = 0.035 Ω, VGS = 5V), which can be used in various applications.

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HUF76429P3, HUF76429S3S is a 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET from Fairchild Semiconductor Corporation.

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This document describes the features and characteristics of the Fairchild Semiconductor products HUF76439P3 and HUF76439S3S, including ultra-low on-resistance, temperature-compensated simulation models and thermal impedance models, as well as peak current vs pulse width curve and switching time vs RGS curve. Ordering information and absolute maximum ratings are also provided.

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This document introduces the HUF76609D3 and HUF76609D3S products from Fairchild Semiconductor Corporation. These are N-channel logic level UltraFET® power MOSFETs with ultra-low on-resistance and high peak current capability. The document also provides packaging symbols, features and characteristics of the products, as well as ordering information and absolute maximum ratings.

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HUF76629D3 and HUF76629D3S are 20A, 100V, 0.054 Ohm, N-channel, logic level UltraFET® power MOSFETs.

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HUF76639P3, HUF76639S3S is a 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET manufactured by Fairchild Semiconductor Corporation

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HUFA75852G3_F085 is a 75A, 150V, 0.016 Ohm, N-channel, UltraFET® Power MOSFET, packaged in JEDEC TO-247.

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This document describes the features and characteristics of Fairchild Semiconductor Corporation's HUFA76429D3 and HUFA76429D3S models, including ultra-low on-resistance, simulation models, peak current vs pulse width curve, UIS rating curve, and switching time vs RGS curve.

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This document describes the features and characteristics of the IRFM120A product, including avalanche rugged technology, lower input capacitance, improved gate charge, extended safe operating area, and lower leakage current. The product has lower leakage current and on-resistance, and is compatible with IEEE802.3af standard.

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IRL640A is a power MOSFET with the following features: logic-level gate drive, avalanche rugged technology, rugged gate oxide technology, lower input capacitance, improved gate charge, extended safe operating area, lower leakage current, lower RDS(on).

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