Fairchild Manuals (Industrial)

This document describes the features and characteristics of the NDS8434 single P-channel enhancement mode field effect transistor, released in June 1996. These transistors are produced using Fairchild's proprietary high cell density DMOS technology, which minimizes on-state resistance and provides superior switching performance. They are particularly suitable for low voltage applications such as notebook computer power management and other battery powered circuits, requiring fast switching, low in-line power loss, and resistance to transients.

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This document describes the absolute maximum ratings and features of the NDS8947 dual P-Channel enhancement mode field effect transistor, released in March 1996. The product is suitable for low voltage applications and offers fast switching, low power loss, and resistance to transients.

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NDS9400A is a P-channel enhancement mode power field effect transistor produced by Fairchild. It has extremely low RDS(ON) and high current handling capability. It is suitable for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.

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The NDS9407 60V P-Channel PowerTrench MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).

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The NDS9945 is a N-Channel enhancement mode power field effect transistor produced by Fairchild using its proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

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NDS9948 is a P-Channel MOSFET from Fairchild Semiconductor with a 60V rating and a maximum current of 2.3A. RDS(ON) is 250mΩ, and it has low gate charge and fast switching speed.

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The document describes the absolute maximum ratings and thermal characteristics of the NDS9952A dual N&P-channel enhancement mode field effect transistor released in February 1996. The product is produced using high-density DMOS technology and features low on-state resistance, superior switching performance, and resistance to high-energy pulses. It is particularly suitable for low voltage applications such as notebook computer power management and other battery powered circuits.

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NDT014 N-Channel Enhancement Mode Field Effect Transistor is a power field effect transistor produced using Fairchild's proprietary high cell density DMOS technology. It features extremely low on-state resistance and superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

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NDT014L is an N-channel logic level enhancement mode power field effect transistor with extremely low RDS(ON), high power and current handling capability in a widely used surface mount package.

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This document describes the features and characteristics of the 60V P-Channel enhancement mode field effect transistor produced by Fairchild Semiconductor. It is primarily used for power management applications.

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The NDT3055 is a N-channel enhancement mode field effect transistor with a maximum current of 4 A and a maximum voltage of 60 V. It has extremely low RDS(ON) and high power and current handling capability. This device is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

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This document introduces ND3055L, a logic level N-channel enhancement mode power field effect transistor. It has a maximum current of 4A and a maximum voltage of 60V. The product uses Fairchild's proprietary high density DMOS technology and has extremely low on-state resistance and superior switching performance. It is particularly suitable for low voltage applications such as DC motor control and power conversion.

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NDT451AN N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

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NDT452AP P-Channel Enhancement Mode Field Effect Transistor is a power field effect transistor that uses Fairchild's proprietary high cell density DMOS technology, which has extremely low RDS(ON) and superior switching performance.

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This document describes the features and characteristics of the NDT454P P-Channel Enhancement Mode Field Effect Transistor, released in June 1996. The product is a power field effect transistor produced using high cell density DMOS technology, providing low on-state resistance and superior switching performance. It is particularly suitable for low voltage applications such as notebook computer power management and other battery powered circuits, where fast switching, low power loss, and resistance to transients are required.

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The document describes the features and characteristics of the NDT456P P-Channel Enhancement Mode Field Effect Transistor manufactured in December 1998. The transistor has a drain-source voltage of -30V, gate-source voltage of ±20V, and maximum drain current of -7.5A. It is produced using a high-density cell design, providing extremely low on-state resistance and high power and current handling capability. It is suitable for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.

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RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET. This product has ultra low on-resistance, temperature compensated PSPICE® and SABER© electrical models, Spice and SABER© thermal impedance models.

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RFD14N05L, RFD14N05LSM, RFP14N05L are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.

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This datasheet provides the specifications of RFD14N05 and RFD14N05SM, including rated voltage, packaging type, power dissipation, etc.

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This document describes the features and characteristics of RFD16N05L and RFD16N05LSM, which are N-Channel logic level power MOSFET devices. It includes their power control, conductance, gate bias range, special gate oxide design, switching speed, etc.

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