Fairchild Manuals (Industrial)

FQPF33N10 is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance and high energy pulse withstandability. It is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.

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FQPF33N10L 100V LOGIC N-Channel MOSFET is a product produced by Fairchild Semiconductor. It uses Fairchild's proprietary planar stripe DMOS technology, which has the advantages of low on-state resistance, superior switching performance, high energy pulse tolerance, etc. This product is suitable for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.

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This datasheet provides absolute maximum ratings, thermal characteristics, drain-source voltage, drain-source current, gate-source voltage, single pulsed avalanche energy, avalanche current, repetitive avalanche energy, peak diode recovery dv/dt, power dissipation, operating and storage temperature for FQPF47P06.

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QFET is a new type of power switch device developed by ON Semiconductor. It has the advantages of small size, large power, fast switching speed, and low switching loss. QFET is suitable for various power applications, such as switch power supplies, motor drives, LED drives, etc.

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FQPF5N90 is a 900V N-channel MOSFET with features like low on-resistance, fast switching, 100% avalanche tested, improved dv/dt capability.

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The FQPF5P20 is a 200V P-channel MOSFET with low gate charge, low Crss, fast switching and 100% avalanche tested.

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This file introduces the structure and working principle of QFET.

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FQPF6N80T is a 800V N-channel MOSFET from Fairchild with a maximum continuous current of 3.3A and a 1.95 ohm on-state resistance, low gate charge and fast switching characteristics.

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FQPF70N10 is a 100V N-channel MOSFET from Fairchild that uses Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse handling capability. This device is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

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This document introduces an N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in avalanche and commutation mode. It is suitable for high efficiency switch mode power supplies.

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The FQP7N65C/FQPF7N65C is a N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

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QFET QFET QFET QFET is a lead-free solder wire alternative that has high performance, low cost, easy to process and environmentally friendly features.

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FQPF85N06 is a 60V N-Channel MOSFET produced by Fairchild. It has a maximum output current of 53A, a switch resistance of 0.010Ω, a gate charge of 86 nC and a parasitic capacitance of 165 pF, which is suitable for low voltage applications such as automotive, DC/DC converters and high efficiency switching for power management in portable and battery operated products.

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FQP8N60C/FQPF8N60C is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse resistance in avalanche and commutation mode. This device is suitable for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

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This document is the product manual of FQPF8N60CF 600V N-Channel MOSFET. It introduces the features and characteristics of the product, including current, voltage, switching speed, etc.

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This datasheet provides the feature parameters of FQP9N25C/FQPF9N25C, including rated voltage, continuous current, switching frequency, gate voltage and on-state resistance.

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This document describes the features and characteristics of the FQPF9N50CF 500V N-Channel MOSFET product.

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FQPF9P25 is a 250V P-channel MOSFET produced by Fairchild. It features low RDS(on), low gate charge, low Crss, and fast switching.

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This document describes the features and characteristics of QFET products

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This document is about QFET. QFET is a new type of semiconductor device that has high efficiency, low power consumption and high reliability. QFET has a wide range of applications, including power electronics, communications, medical and other fields.

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