Fairchild Manuals (Industrial)

This document describes the features and characteristics of Fairchild Semiconductor's FAN5091 product. The FAN5091 is a synchronous multi-slice DC-DC controller IC that provides a highly accurate, programmable output voltage for all high-performance processors. It features programmable output, two interleaved synchronous slices, current sharing, remote sense, and more.

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FGH30N6S2/FGP30N6S2/FGB30N6S2 is a N-channel IGBT from Fairchild Semiconductor Corporation released in August 2003. It has a rated voltage of 600V, low gate charge, low plateau voltage and avalanche capability. It is suitable for high voltage switched mode power supply applications.

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This datasheet records the model, package, voltage, current, RDSon, switching time, gate voltage and other information of FGH30N6S2 / FGP30N6S2 / FGB30N6S2. This datasheet is mainly used for power factor correction (PFC) circuits, full bridge topologies, half bridge topologies, push-pull circuits, uninterruptible power supplies, zero voltage and zero current switching circuits.

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FQPF19N10 100V N-Channel MOSFET is a kind of N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor. It has low on-state resistance, excellent switching performance and high energy pulse withstand capability. This device is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

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This document describes the features and characteristics of the FQP15P12/FQPF15P12 P-Channel MOSFET products, including low voltage applications, low on-state resistance, fast switching, and high temperature tolerance.

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FQPF13N06L is a 60V logic N-channel MOSFET produced by Fairchild Semiconductor. It features low on-state resistance, superior switching performance and high energy pulse tolerance, and is suitable for low-voltage applications such as automotive, DC/DC converters, and high-efficiency switching for power management in portable and battery-operated products.

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This document describes the features and characteristics of the FQPF13N06L 60V logic N-channel MOSFET product. This product is produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and can withstand high energy pulses. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

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FQPF13N06 60V N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor Corporation. It has low on-state resistance, superior switching performance and high energy pulse withstand capability. It is suitable for applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.

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This document describes the FQPF13N06 N-Channel MOSFET product produced by Fairchild Semiconductor Corporation. The product uses advanced DMOS technology, with low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for low voltage applications such as DC/DC converters and high efficiency switching control in portable and battery operated products.

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This is a technical document about FQPF12P20. It introduces the features and characteristics of this product, including on-state resistance, switching performance, avalanche and commutation mode, efficiency, gate charge, Crss, fast switching, avalanche tested, dv/dt capability, etc.

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This document describes the features and characteristics of the FQPF12P20 200V P-Channel MOSFET produced by Fairchild Semiconductor International. It uses advanced DMOS technology to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. These devices are well suited for high efficiency switching DC/DC converters.

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FQPF12P10 is a P-channel MOSFET produced by Fairchild. It has low gate charge, low on-state resistance, fast switching, 100% avalanche testing and other features. It is suitable for applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.

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FQPF12N60CT 600V N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor Corporation using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

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FQP12N60C/FQPF12N60C is a 600V N-channel MOSFET produced by Fairchild with a maximum current of 12A, 0.65 ohms on-state resistance, 21 picofarads capacitance and 48 nanoamperes gate charge, suitable for high efficiency switched mode power supplies, active power factor correction, half-bridge topology electronic lamp ballasts and other applications

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The MOC301XM and MOC302XM series are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon bilateral switch, which functions like a triac. They are designed for interfacing between electronic controls and power triacs to control resistive and inductive loads for 115 VAC operations.

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