Fairchild Manuals (Industrial)

RFD16N05, RFD16N05SM 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs are manufactured by Fairchild Semiconductor Corporation. It has features such as 16A, 50V, rDS(ON) = 0.047 Ω, Temperature Compensating PSPICE® Model, Peak Current vs Pulse Width Curve, UIS Rating Curve, 175oC Operating Temperature.

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RFD16N06LESM is a N-Channel power MOSFETs manufactured by Fairchild Semiconductor Corporation with 16A, 60V, 0.047 Ohm, Logic Level features.

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This is a 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs, produced by Fairchild Semiconductor Corporation.

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RFP12N10L 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET is a N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers.

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This document describes the features and characteristics of the RFG50N06, RFP50N06, and RF1S50N06SM N-Channel power MOSFETs from Fairchild Semiconductor Corporation. These MOSFETs are manufactured using the MegaFET process and provide outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.

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RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM are N-channel power MOSFETs manufactured by Fairchild Semiconductor Corporation. They have a feature of 70A, 60V, 0.014 Ohm. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

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Si3443DV is a P-Channel 2.5V specified PowerTrench MOSFET. It has a drain-source voltage of -20V and a gate-source voltage of ±8V. The continuous drain current is -4A, and the pulsed drain current is -20A. The device has a maximum power dissipation of 1.6W. The operating and storage junction temperature range is -55 to +150°C.

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This is the official datasheet for Si3457DV. It is a single P-channel logic level PowerTrench MOSFET produced by Fairchild. It has been optimized for battery power management applications.

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This document describes the features and characteristics of Fairchild Semiconductor's SI4435DY 30V P-Channel PowerTrench MOSFET, which is suitable for power management, load switch, and battery protection applications.

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Si4532DY* is a dual N- and P-channel enhancement mode field effect transistor with unique features and characteristics.

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Si4542DY is a 30V complementary PowerTrench MOSFET from Fairchild Semiconductor International. This device has low on-state resistance and low gate charge, and is suitable for DC/DC converters and power management applications.

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SSN1N45B is a 450V N-channel MOSFET produced by Fairchild Semiconductor Corporation. The device uses Fairchild's proprietary planar DMOS technology, which features low on-state resistance, superior switching performance, high energy pulse voltage tolerance, and dv/dt capability. It is well suited for half-bridge electronic ballasts.

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This datasheet provides the features and characteristics of FQD3N50C / FQU3N50C 500V N-Channel MOSFET.

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English abstract: This document introduces the xxx brand xxx model product's features and characteristics, and conducts tests on it. The test results show that xxx product has xxx, xxx, xxx and other features, and is suitable for xxx scenarios.

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The QFET series is the company's latest generation of high performance, high reliability, high integration, low power consumption and high cost-effective automotive grade power electronic devices. The product line covers fast recovery diodes, Schottky diodes, rectifier bridges, power modules and IGBTs. QFET adopts advanced design technology and process, with excellent performance, reliability and high cost performance, widely used in automotive electronics, new energy vehicles, rail transit, industrial control, communications and other fields

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The HUF75321D3ST 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs are innovative N-Channel power MOSFETs manufactured by Fairchild Semiconductor Corporation, achieving the lowest possible on-resistance per silicon area, resulting in outstanding performance.

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HUF75321P3, HUF75321S3S 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs are manufactured by Fairchild Semiconductor Corporation. This product has a rated current and voltage of 35A and 55V. It uses the innovative UltraFET® process for manufacturing and achieves the lowest silicon area switch resistance, resulting in outstanding performance. This device can withstand high energy in the avalanche mode and the diode has a very low reverse recovery time and stored charge. It is designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

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This document introduces HUF75329D3 and HUF75329D3S N-Channel UltraFET power MOSFETs, which are manufactured using the innovative UltraFET process and have low on-resistance and outstanding performance. This device is designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

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This document introduces the HUF75332G3, HUF75332P3, and HUF75332S3S N-Channel UltraFET power MOSFETs manufactured by Fairchild Semiconductor Corporation. These devices are made using the innovative UltraFET process and offer the lowest possible on-resistance and outstanding performance. They are capable of withstanding high energy in the avalanche mode and have very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

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This datasheet introduces the features and applications of HUF75339G3, HUF75339P3, HUF75339S3S 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs

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