FAIRCHILD NDT454P Manual
Update: 28 September, 2023
This document describes the features and characteristics of the NDT454P P-Channel Enhancement Mode Field Effect Transistor, released in June 1996. The product is a power field effect transistor produced using high cell density DMOS technology, providing low on-state resistance and superior switching performance. It is particularly suitable for low voltage applications such as notebook computer power management and other battery powered circuits, where fast switching, low power loss, and resistance to transients are required.
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MD5 Checksum: 3E52702F9888C2A24DB3E37A9296E509
Publication date: 12 July, 2012
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FAIRCHILD NDT454P Manual PDF