Update: 29 September, 2023
The document describes the features and characteristics of the NDT456P P-Channel Enhancement Mode Field Effect Transistor manufactured in December 1998. The transistor has a drain-source voltage of -30V, gate-source voltage of ±20V, and maximum drain current of -7.5A. It is produced using a high-density cell design, providing extremely low on-state resistance and high power and current handling capability. It is suitable for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
File format: PDF
Size: -
MD5 Checksum: 6957062C25D2A2CD43A6B283E856C5E4
Publication date: 12 July, 2012
Downloads: -
PDF Link: FAIRCHILD NDT456P Manual PDF